EP 0726590 A3 19961211 - Method for forming a field emission cold cathode
Title (en)
Method for forming a field emission cold cathode
Title (de)
Herstellungsverfahren einer Feldemissionskaltkathode
Title (fr)
Procédé de fabrication d'une cathode froide à émission de champ
Publication
Application
Priority
JP 2358295 A 19950213
Abstract (en)
[origin: EP0726590A2] The present invention provides a method for reshaping up a cone-like electrode (3) which is made of a refractory metal containing silicon. The method comprises the following steps. A surface of the cone-like electrode (3) is subjected to an oxidation of silicon which is contained in the refractory metal. The oxidation is generated at rates which increase toward a top portion of the cone-like electrode. As a result, a silicon oxide film (9) is formed, which coats the cone-like electrode (3). The silicon oxide film (9) has thickness which gradually increase toward a bottom portion of the cone-like electrode (3). An interface between the silicon oxide film (9) and the cone-like electrode (3) has sloped angles which increase toward the top portion. The silicon oxide film (9) is removed to thereby expose a reshaped cone electrode (3) which has a sharply pointed top. The reshaped cone electrode (3) has a surface having sloped angles which increase toward the sharply pointed top. <IMAGE>
IPC 1-7
IPC 8 full level
H01J 1/30 (2006.01); H01J 1/304 (2006.01); H01J 9/02 (2006.01)
CPC (source: EP KR)
H01J 1/304 (2013.01 - KR); H01J 9/02 (2013.01 - KR); H01J 9/025 (2013.01 - EP); H01J 2209/0226 (2013.01 - EP)
Citation (search report)
- [A] US 4855636 A 19890808 - BUSTA HEINZ H [US], et al
- [A] EP 0508737 A1 19921014 - FUJITSU LTD [JP]
- [A] US 5201992 A 19930413 - ANDREADAKIS NICHOLAS C [US], et al
- [A] FR 2700222 A1 19940708 - SAMSUNG DISPLAY DEVICES CO LTD [KR]
- [A] EP 0483814 A2 19920506 - SONY CORP [JP]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0726590 A2 19960814; EP 0726590 A3 19961211; EP 0726590 B1 19990407; DE 69601961 D1 19990512; DE 69601961 T2 19991014; JP H08222126 A 19960830; KR 0181326 B1 19990320; KR 960032553 A 19960917
DOCDB simple family (application)
EP 96102013 A 19960212; DE 69601961 T 19960212; JP 2358295 A 19950213; KR 19960003445 A 19960213