Global Patent Index - EP 0731974 A1

EP 0731974 A1 19960918 - METHOD FOR THE MANUFACTURE OF A CAPACITOR AND CAPACITOR OBTAINED

Title (en)

METHOD FOR THE MANUFACTURE OF A CAPACITOR AND CAPACITOR OBTAINED

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES KONDENSATORS UND AUF DIESE WEISE HERGESTELLTER KONDENSATOR

Title (fr)

PROCEDE DE FABRICATION DE CONDENSATEUR ET CONDENSATEUR ISSU D'UN TEL PROCEDE

Publication

EP 0731974 A1 19960918 (FR)

Application

EP 95902822 A 19941201

Priority

  • FR 9401404 W 19941201
  • FR 9314519 A 19931203

Abstract (en)

[origin: WO9515570A1] Method for the manufacture of a stacked-type capacitor consisting of alternating dielectric layers and conducting layers. The dielctric and conducting layers are deposited in succession. The dielectric layers are deposited by polymerization of elements derived from the dissociation, by remote nitrogen plasma, of an organo-siliceous or organo-germanium gas. The conducting layers are formed by deposition of conducting elements derived from the dissociation, by remote nitrogen plasma, of a precursor gas of the conducting elements.

IPC 1-7

H01G 4/30; H01G 4/008; H01G 4/012

IPC 8 full level

C23C 16/30 (2006.01); H01G 4/008 (2006.01); H01G 4/012 (2006.01); H01G 4/30 (2006.01); H01G 4/33 (2006.01)

CPC (source: EP KR)

H01F 38/28 (2013.01 - KR); H01G 4/0085 (2013.01 - EP); H01G 4/012 (2013.01 - EP); H01G 4/30 (2013.01 - EP)

Citation (search report)

See references of WO 9515570A1

Designated contracting state (EPC)

AT BE CH DE ES FR GB IE IT LI LU NL SE

DOCDB simple family (publication)

WO 9515570 A1 19950608; CA 2177987 A1 19950608; EP 0731974 A1 19960918; FI 962293 A0 19960531; FI 962293 A 19960722; FR 2713388 A1 19950609; FR 2713388 B1 19960126; JP H09505943 A 19970610; KR 960706683 A 19961209

DOCDB simple family (application)

FR 9401404 W 19941201; CA 2177987 A 19941201; EP 95902822 A 19941201; FI 962293 A 19960531; FR 9314519 A 19931203; JP 51545095 A 19941201; KR 19960702896 A 19960603