EP 0732749 A3 19971008 - Insulated gate bipolar semiconductor device and manufacturing method thereof
Title (en)
Insulated gate bipolar semiconductor device and manufacturing method thereof
Title (de)
Bipolare Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung
Title (fr)
Dispositif semi-conducteur bipolaire à grille isolée et méthode de fabrication
Publication
Application
Priority
JP 5456495 A 19950314
Abstract (en)
[origin: EP0732749A2] It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a manufacturing method thereof. An N layer (43) is provided in close contact on a surface of an N<-> layer (42), a P base layer (44) is provided in close contact on the surface of the N layer (43), and a trench (47) which passes at least through the P base layer (44) is provided, and a gate electrode (49) is provided in the trench (47) through a gate insulating film (48). The carrier distribution of the N<-> layer (42) becomes closer to the carrier distribution of a diode, and an ON voltage is decreased and a current value capable of being turned off is not decreased when turning off. Accordingly, there are provided an insulated gate semiconductor device with low power consumption, small size, large capacity and high reliability. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/739 (2006.01)
CPC (source: EP KR US)
H01L 29/66348 (2013.01 - EP US); H01L 29/72 (2013.01 - KR); H01L 29/7397 (2013.01 - EP US)
Citation (search report)
- [DA] EP 0527600 A1 19930217 - TOSHIBA KK [JP]
- [A] EP 0615292 A1 19940914 - HITACHI LTD [JP]
- [A] PATENT ABSTRACTS OF JAPAN vol. 012, no. 420 (E - 679) 8 November 1988 (1988-11-08)
- [A] PATENT ABSTRACTS OF JAPAN vol. 018, no. 531 (E - 1614) 7 October 1994 (1994-10-07)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0732749 A2 19960918; EP 0732749 A3 19971008; EP 0732749 B1 20030716; DE 69629069 D1 20030821; DE 69629069 T2 20040415; KR 100199271 B1 19990701; KR 960036120 A 19961028; US 5751024 A 19980512
DOCDB simple family (application)
EP 96102102 A 19960213; DE 69629069 T 19960213; KR 19960006882 A 19960314; US 56657295 A 19951128