EP 0735152 A4 19970226 - MOLYBDENUM-TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM-TUNGSTEN TARGET FOR WIRING, PROCESS FOR PRODUCING THE SAME, AND MOLYBDENUM-TUNGSTEN WIRING THIN FILM
Title (en)
MOLYBDENUM-TUNGSTEN MATERIAL FOR WIRING, MOLYBDENUM-TUNGSTEN TARGET FOR WIRING, PROCESS FOR PRODUCING THE SAME, AND MOLYBDENUM-TUNGSTEN WIRING THIN FILM
Title (de)
MOLYBDÄN-WOLFRAM-MATERIAL ZUM VERDRAHTEN, MOLYBDÄN-WOLFRAM-TARGET ZUM VERDRAHTEN, VERFAHREN ZU DEREN HERSTELLUNG UND DÜNNE MOLYBDÄN-WOLFRAM VERDRAHTUNG
Title (fr)
MATERIAU EN MOLYBDENE-TUNGSTENE POUR CABLAGE, CIBLE EN MOLYBDENE-TUNGSTENE POUR CABLAGE, PROCEDE DE FABRICATION ET COUCHE MINCE DE CABLAGE EN MOLYBDENE-TUNGSTENE
Publication
Application
Priority
- JP 9402095 W 19941214
- JP 31293693 A 19931214
Abstract (en)
[origin: EP0947593A2] A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability. <IMAGE>
IPC 1-7
IPC 8 full level
B22F 1/00 (2006.01); C22C 27/04 (2006.01); C23C 14/34 (2006.01); G02F 1/1362 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR US)
B22F 1/09 (2022.01 - EP KR US); C22C 27/04 (2013.01 - EP KR US); C23C 14/3414 (2013.01 - EP KR US); G02F 1/136286 (2013.01 - EP US); H01L 21/76838 (2013.01 - EP US); H01L 23/53257 (2013.01 - EP US); H01L 28/60 (2013.01 - EP US); H01L 29/78618 (2013.01 - KR); G02F 1/136295 (2021.01 - EP US); H01L 2924/0002 (2013.01 - EP US); Y10T 428/12014 (2015.01 - EP US); Y10T 428/12826 (2015.01 - EP US); Y10T 428/1284 (2015.01 - EP US); Y10T 428/2951 (2015.01 - EP US)
C-Set (source: EP US)
Citation (search report)
No further relevant documents disclosed
Designated contracting state (EPC)
AT DE FR GB
DOCDB simple family (publication)
EP 0947593 A2 19991006; EP 0947593 A3 19991215; AT E216436 T1 20020515; DE 69430439 D1 20020523; DE 69430439 T2 20030206; EP 0735152 A1 19961002; EP 0735152 A4 19970226; EP 0735152 B1 20020417; JP 3445276 B2 20030908; KR 100210525 B1 19990715; KR 960706570 A 19961209; TW 360926 B 19990611; US 5913100 A 19990615; US 6200694 B1 20010313; US 7153589 B1 20061226; WO 9516797 A1 19950622
DOCDB simple family (application)
EP 99201616 A 19941214; AT 95902950 T 19941214; DE 69430439 T 19941214; EP 95902950 A 19941214; JP 51666095 A 19941214; JP 9402095 W 19941214; KR 19960703145 A 19960614; TW 83112117 A 19941223; US 16574398 A 19981006; US 20367898 A 19981201; US 66325196 A 19960906