EP 0742956 A1 19961120 - HIGH DENSITY CONTACTLESS FLASH EPROM ARRAY USING CHANNEL ERASE
Title (en)
HIGH DENSITY CONTACTLESS FLASH EPROM ARRAY USING CHANNEL ERASE
Title (de)
KONTAKTLOSE FLASH-EPROM-MATRIX VON HOHER DICHTE MIT KANALLÖSCHUNG
Title (fr)
MEMOIRE FLASH EPROM SANS CONTACT EN MATRICE HAUTE DENSITE FONCTIONNANT PAR EFFACEMENT CANAL
Publication
Application
Priority
- US 9515395 W 19951127
- US 34598594 A 19941128
Abstract (en)
[origin: WO9617384A1] The present invention provides a contactless flash EPROM array formed in a P-well in a diffused silicon substrate of N-type conductivity. To facilitate a channel erase operation, thin tunnel oxide is formed between the P-well and the overlying polysilicon floating gate EPROM cells. The array is programmed in a conventional EPROM cell array manner. However, in accordance with the invention, the channel erase of a selected row of EPROM cells is accomplished by allowing all bit lines to float, applying a negative erase voltage to the word line of the selected row and holding the substrate at the supply voltage.
IPC 1-7
IPC 8 full level
G11C 16/04 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP KR)
G11C 16/0491 (2013.01 - EP KR); H10B 41/35 (2023.02 - KR); H10B 69/00 (2023.02 - EP); H01L 21/0214 (2013.01 - KR); H01L 21/32055 (2013.01 - KR)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 9617384 A1 19960606; EP 0742956 A1 19961120; KR 970700943 A 19970212
DOCDB simple family (application)
US 9515395 W 19951127; EP 95942910 A 19951127; KR 19960704077 A 19960727