EP 0742958 A1 19961120 - TURN-OFF POWER SEMICONDUCTOR COMPONENT
Title (en)
TURN-OFF POWER SEMICONDUCTOR COMPONENT
Title (de)
ABSCHALTBARES LEISTUNGSHALBLEITERBAUELEMENT
Title (fr)
COMPOSANT DE PUISSANCE A SEMI-CONDUCTEUR INTERRUPTIBLE
Publication
Application
Priority
- DE 4402884 A 19940201
- EP 9500307 W 19950130
Abstract (en)
[origin: DE4402884C1] The semiconductor element has a number of adjacent cells formed in the body of the semiconductor, acting as a p-emitter zone (1), a n-base zone (2) and a p-base zone (3) in which a n-emitter zone (4) is embedded. At least one p-zone (5) is embedded in the n-emitter zone, providing a ballast resistance, provided with 2 ohmic contacts. One of the contacts acts as an outer cathode metallisation (K), which has no contact with the n-emitter zone, the other acting as a floating contact (K') in ohmic contact with the n-emitter zone.
IPC 1-7
IPC 8 full level
H01L 29/08 (2006.01); H01L 29/74 (2006.01); H01L 29/744 (2006.01); H01L 29/749 (2006.01)
CPC (source: EP US)
H01L 29/0839 (2013.01 - EP US); H01L 29/744 (2013.01 - EP US)
Citation (search report)
See references of WO 9521461A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 4402884 C1 19950518; EP 0742958 A1 19961120; US 5731605 A 19980324; WO 9521461 A1 19950810
DOCDB simple family (application)
DE 4402884 A 19940201; EP 9500307 W 19950130; EP 95908217 A 19950130; US 68270296 A 19960726