Global Patent Index - EP 0743685 A3

EP 0743685 A3 19970129 - Nonvolatile semiconductor memory utilizing polarization of ferroelectric material

Title (en)

Nonvolatile semiconductor memory utilizing polarization of ferroelectric material

Title (de)

Nichtflüchtiger Halbleiterspeicher, der die Polarization eines ferroelektrischen Materials braucht

Title (fr)

Mémoire rémanente semi-conductrice utilisant la polarisation d'un matériau ferroélectrique

Publication

EP 0743685 A3 19970129 (EN)

Application

EP 96108018 A 19960520

Priority

JP 14236595 A 19950518

Abstract (en)

[origin: EP0743685A2] A nonvolatile semiconductor memory comprises a silicon substrate (1), a gate electrode (5) formed through a gate insulator film (3,4) on a principal surface of the semiconductor substrate (1), a pair of source/drain regions (7,8) formed in a principal surface region of the semiconductor substrate to locate the gate electrode (5) between the pair of source/drain regions (7,8). The gate insulator film is formed of a silicon oxide and/or silicon nitride film (3) in contact with the principal surface of the semiconductor substrate, and a lead germanate film (4) which is formed on the silicon oxide and/or silicon nitride film (3) and which is a ferroelectric having a dielectric constant of not larger than 50. <IMAGE>

IPC 1-7

H01L 29/78; H01L 29/51

IPC 8 full level

H01L 21/8247 (2006.01); H01L 27/10 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)

CPC (source: EP US)

H01L 29/78391 (2014.09 - EP US)

Citation (search report)

  • [A] EP 0540993 A1 19930512 - RAMTRON INT CORP [US]
  • [X] PATENT ABSTRACTS OF JAPAN vol. 95, no. 003
  • [A] PATENT ABSTRACTS OF JAPAN vol. 017, no. 513 (C - 1111) 16 September 1993 (1993-09-16)
  • [A] PATENT ABSTRACTS OF JAPAN vol. 017, no. 285 (C - 1066) 2 June 1993 (1993-06-02)
  • [A] F. LISSALDE ET AL.: "Tracé de cycles d'hystérèse par mesures d'intensités aux rayons X dans le ferroélectrique MnTO3 ( T=Y, Ho, Er, Tm, Yb, Lu).Observation directe des domaines ferroélectriques.", BULLETIN DE LA SOCIETE FRANÇAISE DE MINERALOGIE ET CRISTALLOGRAPHIE, vol. 91, no. 6, 1968, FRANCE, pages 672 - 676, XP000610434
  • [PA] PATENT ABSTRACTS OF JAPAN vol. 96, no. 8 30 August 1996 (1996-08-30)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0743685 A2 19961120; EP 0743685 A3 19970129; EP 0743685 B1 20020925; DE 69623850 D1 20021031; DE 69623850 T2 20030807; JP 2907322 B2 19990621; JP H08316342 A 19961129; KR 100247884 B1 20000315; US 6515322 B1 20030204

DOCDB simple family (application)

EP 96108018 A 19960520; DE 69623850 T 19960520; JP 14236595 A 19950518; KR 19960016769 A 19960518; US 65094896 A 19960520