EP 0746874 A1 19961211 - CHEMICAL VAPOR DEPOSITION CHAMBER
Title (en)
CHEMICAL VAPOR DEPOSITION CHAMBER
Title (de)
CVD-KLAMMER
Title (fr)
CHAMBRE DE DEPOT CHIMIQUE EN PHASE VAPEUR
Publication
Application
Priority
- US 9502138 W 19950221
- US 20086294 A 19940223
- US 20007994 A 19940223
Abstract (en)
[origin: WO9523428A2] A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
IPC 1-7
IPC 8 full level
C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/205 (2006.01); H01L 21/285 (2006.01)
CPC (source: EP)
C23C 16/45521 (2013.01); C23C 16/4583 (2013.01); C23C 16/4585 (2013.01)
Citation (search report)
- [A] EP 0489439 A1 19920610 - APPLIED MATERIALS INC [US]
- [PX] EP 0619381 A1 19941012 - APPLIED MATERIALS INC [US]
- [X] PATENT ABSTRACTS OF JAPAN vol. 017, no. 463 (E - 1420) 24 August 1993 (1993-08-24)
- See references of WO 9523428A2
Designated contracting state (EPC)
AT BE CH DE ES FR GB GR IE IT LI NL SE
DOCDB simple family (publication)
WO 9523428 A2 19950831; WO 9523428 A3 19951123; EP 0746874 A1 19961211; JP 4108119 B2 20080625; JP H09509534 A 19970922
DOCDB simple family (application)
US 9502138 W 19950221; EP 95911831 A 19950221; JP 52241195 A 19950221