Global Patent Index - EP 0747505 B1

EP 0747505 B1 20030917 - Method for depositing a substance with temperature control

Title (en)

Method for depositing a substance with temperature control

Title (de)

Methode mit Temperaturreglung zum Abscheiden eines Werkstoffes

Title (fr)

Méthode avec régulation de température pour la déposition d'un matériau

Publication

EP 0747505 B1 20030917 (EN)

Application

EP 96201480 A 19960529

Priority

US 48058095 A 19950607

Abstract (en)

[origin: US6099652A] An apparatus for depositing synthetic diamond on a surface of a substrate includes a deposition chamber and a cooling block having a surface in the deposition chamber that is cooled by heat exchange. The substrate is supported from the cooling block so that the bottom surface of the substrate is spaced from the cooling block surface by a gap, and a gas is provided in the deposition chamber and in the gap, the gas comprising at least 30 percent hydrogen gas. A plasma deposition system forms in the chamber a plasma containing hydrogen gas and a hydrocarbon gas for depositing synthetic diamond on the top surface of the substrate.

IPC 1-7

C23C 16/50; C23C 16/46; C23C 16/52; C23C 16/26; C23C 16/44

IPC 8 full level

C23C 16/26 (2006.01); C23C 16/27 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01); C30B 29/04 (2006.01)

CPC (source: EP US)

C23C 16/4586 (2013.01 - EP US); C23C 16/46 (2013.01 - EP US); C23C 16/463 (2013.01 - EP US); C23C 16/52 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

US 6099652 A 20000808; CA 2177645 A1 19961208; CA 2177645 C 20001003; DE 69629980 D1 20031023; DE 69629980 T2 20040729; EP 0747505 A2 19961211; EP 0747505 A3 19980311; EP 0747505 B1 20030917; JP H0925195 A 19970128; US 5679404 A 19971021

DOCDB simple family (application)

US 86376397 A 19970527; CA 2177645 A 19960529; DE 69629980 T 19960529; EP 96201480 A 19960529; JP 14613196 A 19960607; US 48058095 A 19950607