Global Patent Index - EP 0748040 A1

EP 0748040 A1 19961211 - Gain stability arrangement for HV MOSFET power amplifier

Title (en)

Gain stability arrangement for HV MOSFET power amplifier

Title (de)

Verstärkungsstabilitätsanordnung für HochspannungsMOSFETleistungsverstärker

Title (fr)

Dispositif de stabilité de gain pour amplificateur de puissance à transistor MOS haute tension

Publication

EP 0748040 A1 19961211 (EN)

Application

EP 96301821 A 19960318

Priority

US 46634795 A 19950606

Abstract (en)

The amplifier includes a linear preamplifier which is coupled to a signal input and has an output. An RF output circuit provides an amplified RF output signal. A number of high-voltage FET are also provided with each having a source-drain current path coupled to the RF output circuit. Each FET has a gate coupled to the output of the linear preamplifier. A temperature sensor is in thermal communication with the transistors and has an output whose level varies in accordance with the temperature of the transistors. A short-term (minutes) gain stability compensation circuit is coupled to the temperature sensor output and controls the drain voltage. A short-term (seconds) gain stability compensation circuit has an input coupled to the RF output circuit and coupled to control the gain of the linear preamplifier means to compensate for short term changes in the RF output signal level.

IPC 1-7

H03F 1/30; H03F 3/60; H03F 3/193

IPC 8 full level

H03F 1/30 (2006.01); H03F 1/02 (2006.01); H03F 3/26 (2006.01); H03F 3/60 (2006.01)

CPC (source: EP US)

H03F 1/0233 (2013.01 - EP US); H03F 3/265 (2013.01 - EP US); H03F 3/604 (2013.01 - EP US)

Citation (search report)

  • [A] EP 0493081 A2 19920701 - SGS THOMSON MICROELECTRONICS [US]
  • [A] GB 1393245 A 19750507 - PLESSEY CO LTD
  • [A] R. LARKIN M. TESTA: "CELLULAR TELEPHONE SYSTEMS FOR RURAL AREAS", ELECTRICAL COMMUNICATION, 1 January 1994 (1994-01-01) - 30 March 1994 (1994-03-30), PARIS FR, pages 78 - 83, XP000445990
  • [A] PST INC.: "HIGH POWER FEED FORWARD AMPPLIFICATION SYSTEMS", MICROWAVE JOURNAL, vol. 37, no. 2, 1 February 1994 (1994-02-01), pages 128, 130, 133, XP000434622
  • [A] W. JOSEPH SOO HOO: "HIGH POWER GAAS FET SOLID STATE AMPLIFIER(32 WATT) DEVELOPMENT PROGRAM(U)", MILCOM86 1986 IEEE MILITARY COMMUNICATIONS CONFERENCE OCTOBER 5-9, MONTEREY, vol. 3/3, 5 October 1986 (1986-10-05) - 9 October 1986 (1986-10-09), MONTEREY CA, pages 37.2.1 - 37.2.4, XP002013441
  • [A] COLLIGIANI A ET AL: "A MOSFET TRANSMISSION-LINE HIGH-POWER ELECTRON-NUCLEAR DOUBLE- RESONANCE SPECTROMETER", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 62, no. 1, 1 January 1991 (1991-01-01), pages 81 - 87, XP000205189

Designated contracting state (EPC)

DE FR GB NL

DOCDB simple family (publication)

EP 0748040 A1 19961211; IL 117566 A0 19960723; IL 117566 A 19990817; JP 3926410 B2 20070606; JP H08330855 A 19961213; US 5537080 A 19960716

DOCDB simple family (application)

EP 96301821 A 19960318; IL 11756696 A 19960320; JP 11321296 A 19960410; US 46634795 A 19950606