EP 0757598 A4 20010314 - PULSED ION BEAM ASSISTED DEPOSITION
Title (en)
PULSED ION BEAM ASSISTED DEPOSITION
Title (de)
MIT GEPULSTEM IONENSTRAHL UNTERSTÜTZTE BESCHICHTUNG
Title (fr)
DEPOT ASSISTE PAR FAISCEAU D'IONS PULSE
Publication
Application
Priority
- US 9601000 W 19960123
- US 37670295 A 19950123
Abstract (en)
[origin: WO9622841A1] The present invention is for a high-speed, commercial-scale means for deposition of films and coatings on a substrate. The PIBAD (pulsed ion beam assisted deposition) processes [Fig. 4] allow notonly deposition, but also special modes of post-deposition treatment of films and coatings, including annealing, melting and regrowth [Fig. 4A], shock wave treatment, and high-pressure plasma redeposition [Fig. 4B] all of which can alter the mechanical, cohesive, and corrosive properties of the final product. In one embodiment of the invention the power system comprises a motor (5) which drives an alternator (10). The alternator delivers a signal to a pulse compression system (15) which has two subsystems, a 1 mu s pulse compressor (12), and a pulse forming line (14). The pulse compression system (15) provides pulses to a linear inductive voltage adder (LIVA)(20) which delivers the pulses to the ion beam source (25).
IPC 1-7
B05C 11/00; B05B 1/32; B05B 3/02; B05B 3/06; C08F 2/46; C23C 8/00; C23C 14/00; C23C 16/00; H05H 1/00; H05H 1/24; B05D 3/14
IPC 8 full level
B23K 15/00 (2006.01); C23C 14/22 (2006.01); C23C 14/58 (2006.01); C23C 26/02 (2006.01); H01J 27/14 (2006.01); H01J 37/317 (2006.01); H01L 21/203 (2006.01)
CPC (source: EP)
C23C 14/221 (2013.01); C23C 14/5833 (2013.01); C23C 26/02 (2013.01); H01J 27/14 (2013.01); H01J 37/3178 (2013.01); H01J 2237/3142 (2013.01)
Citation (search report)
- [XAY] US 5332625 A 19940726 - DUNN DOUGLAS S [US], et al
- [XY] US 4793908 A 19881227 - SCOTT GENE [US], et al
- [Y] US 4844785 A 19890704 - KITABATAKE MAKOTO [JP], et al
- [Y] US 5316969 A 19940531 - ISHIDA EMI [US], et al
- [A] US 5055318 A 19911008 - DEUTCHMAN ARNOLD H [US], et al
- [A] US 4490229 A 19841225 - MIRTICH MICHAEL J [US], et al
- [XY] L.J. CHEN - L.S. HUNG - J.W. MAYER: "Pulsed ion beam annealing of nickel thin films on silicon", METASTABLE MATERIAL FORMATION BY ION IMPLANTATION, November 1981 (1981-11-01), pages 319 - 326, XP000979616
- See references of WO 9622841A1
Designated contracting state (EPC)
BE CH DE DK FR GB IT LI NL
DOCDB simple family (publication)
WO 9622841 A1 19960801; AU 4965896 A 19960814; CA 2186102 A1 19960801; EP 0757598 A1 19970212; EP 0757598 A4 20010314; IL 116876 A0 19960723; JP H09511028 A 19971104
DOCDB simple family (application)
US 9601000 W 19960123; AU 4965896 A 19960123; CA 2186102 A 19960123; EP 96906197 A 19960123; IL 11687696 A 19960123; JP 52300496 A 19960123