EP 0767969 A1 19970416 - PREPARATION OF SEMICONDUCTOR SUBSTRATES
Title (en)
PREPARATION OF SEMICONDUCTOR SUBSTRATES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON HALBLEITERSUBSTRATEN
Title (fr)
PREPARATION DE SUBSTRATS SEMI-CONDUCTEURS
Publication
Application
Priority
- EP 95923462 A 19950629
- EP 94304754 A 19940629
- GB 9501541 W 19950629
Abstract (en)
[origin: WO9600979A1] An indium phosphide semiconductor substrate (10) is prepared for subsequent growth of epitaxial layers (12 to 16) to form a semiconductor device (5). In the preparation, the substrate (10) is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate (10) is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer (11) on the substrate to isolate the device epitaxial layers (12 to 16) from the substrate.
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01); H01L 21/20 (2006.01)
CPC (source: EP KR)
H01L 21/02392 (2013.01 - EP); H01L 21/02461 (2013.01 - EP); H01L 21/02463 (2013.01 - EP); H01L 21/02505 (2013.01 - EP); H01L 21/02546 (2013.01 - EP); H01L 21/02581 (2013.01 - EP); H01L 21/0262 (2013.01 - EP); H01L 21/02658 (2013.01 - EP); H01L 29/778 (2013.01 - KR)
Citation (search report)
See references of WO 9600979A1
Designated contracting state (EPC)
BE DE ES FR GB IT NL
DOCDB simple family (publication)
WO 9600979 A1 19960111; CA 2193098 A1 19960111; CA 2193098 C 20010220; CN 1092839 C 20021016; CN 1155353 A 19970723; EP 0767969 A1 19970416; JP H10504685 A 19980506; KR 970704246 A 19970809
DOCDB simple family (application)
GB 9501541 W 19950629; CA 2193098 A 19950629; CN 95194628 A 19950629; EP 95923462 A 19950629; JP 50295296 A 19950629; KR 19960707298 A 19961220