Global Patent Index - EP 0771028 A3

EP 0771028 A3 19980624 - Semiconductor device with passivation structure

Title (en)

Semiconductor device with passivation structure

Title (de)

Halbleiterbauelement mit Passivierungsaufbau

Title (fr)

Dispositif semi-conducteur avec une structure de passivation

Publication

EP 0771028 A3 19980624 (DE)

Application

EP 96202929 A 19961021

Priority

DE 19540309 A 19951028

Abstract (en)

[origin: EP0771028A2] Structure of a semiconductor element, particularly a bipolar planar transistor, consists of a substrate (1) on which is at least one insulation layer (2,3) defining at least one window, and a passivation structure. The last comprises at least two dielectric layers (4,5), the first extending over the edge of the topmost insulation layer and covers the substrate in an outer edge zone of the window. The second extends over the edge of the first dielectric layer including the outermost edge of the insulation layers. Preferably each of the dielectric layers is of uniform thickness and two insulation layers are provided, the first of thermally produced Si dioxide and the second of the P-containing, thermally produced Si oxide. Dielectric layers are of silicon nitride and silicon dioxide.

IPC 1-7

H01L 23/485

IPC 8 full level

H01L 29/73 (2006.01); H01L 21/316 (2006.01); H01L 21/331 (2006.01); H01L 23/31 (2006.01); H01L 29/06 (2006.01); H01L 29/732 (2006.01)

CPC (source: EP KR US)

H01L 21/762 (2013.01 - KR); H01L 23/3192 (2013.01 - EP US); H01L 29/0638 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

  • [X] DE 3030862 A1 19810226 - TOKYO SHIBAURA ELECTRIC CO
  • [A] DE 3116406 A1 19820616 - HITACHI LTD [JP]
  • [DX] PATENT ABSTRACTS OF JAPAN vol. 14, no. 190 (E - 918) 18 April 1990 (1990-04-18)
  • [A] PATENT ABSTRACTS OF JAPAN vol. 6, no. 119 (E - 116)<997> 3 July 1982 (1982-07-03)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

EP 0771028 A2 19970502; EP 0771028 A3 19980624; DE 19540309 A1 19970430; JP H09167778 A 19970624; KR 970024001 A 19970530; MY 116682 A 20040331; TW 460982 B 20011021; US 5798562 A 19980825

DOCDB simple family (application)

EP 96202929 A 19961021; DE 19540309 A 19951028; JP 28416396 A 19961025; KR 19960049051 A 19961028; MY PI9604446 A 19961025; TW 85114606 A 19961126; US 73851396 A 19961028