EP 0775370 A1 19970528 - PROCESS FOR PRODUCING A SILICON CAPACITOR
Title (en)
PROCESS FOR PRODUCING A SILICON CAPACITOR
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SILIZIUMKONDENSATORS
Title (fr)
PROCEDE DE FABRICATION D'UN CONDENSATEUR AU SILICIUM
Publication
Application
Priority
- DE 9501036 W 19950807
- DE 4428195 A 19940809
Abstract (en)
[origin: DE4428195C1] In order to produce a silicon capacitor, holes are created in an n-doped silicon substrate (1); across the surface of the holes a conducting region (40) is created through doping and a dielectric layer (6) and a conducting layer (7) are provided. To compensate for mechanical stresses in the silicon substrate resulting from the doping of the conducting region (40), the conducting region (40) is in addition doped with germanium which diffuses out from a germanium-doped layer.
IPC 1-7
IPC 8 full level
H01L 27/04 (2006.01); H01L 21/02 (2006.01); H01L 21/822 (2006.01)
CPC (source: EP KR US)
H01L 21/76 (2013.01 - KR); H01L 28/82 (2013.01 - EP US)
Citation (search report)
See references of WO 9605620A1
Designated contracting state (EPC)
AT CH DE DK ES FR GB IT LI NL SE
DOCDB simple family (publication)
DE 4428195 C1 19950420; EP 0775370 A1 19970528; FI 970543 A0 19970207; FI 970543 A 19970207; JP H10503886 A 19980407; KR 970705174 A 19970906; US 5866452 A 19990202; WO 9605620 A1 19960222
DOCDB simple family (application)
DE 4428195 A 19940809; DE 9501036 W 19950807; EP 95927642 A 19950807; FI 970543 A 19970207; JP 50691996 A 19950807; KR 19970700740 A 19970204; US 75094297 A 19970210