EP 0779645 A3 19970917 -
Publication
Application
Priority
US 57076495 A 19951212
Abstract (en)
[origin: US6027606A] The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
IPC 1-7
IPC 8 full level
C23F 4/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H05H 1/00 (2006.01); H05H 1/42 (2006.01)
CPC (source: EP KR US)
H01J 37/321 (2013.01 - EP US); H01J 37/3211 (2013.01 - EP US); H01J 37/3222 (2013.01 - EP US); H01J 37/32449 (2013.01 - EP US); H01J 37/32467 (2013.01 - EP US); H01L 21/302 (2013.01 - KR); Y10S 156/914 (2013.01 - EP US)
Citation (search report)
- [XY] EP 0553704 A1 19930804 - IBM [US]
- [Y] EP 0651427 A1 19950503 - CENTRAL RESEARCH LAB LTD [GB]
- [XA] GB 2231197 A 19901107 - NORDIKO LTD [GB], et al
- [A] EP 0637055 A1 19950201 - APPLIED MATERIALS INC [US]
- [DA] US 5187454 A 19930216 - COLLINS KENNETH S [US], et al
- [DA] US 4948458 A 19900814 - OGLE JOHN S [US]
- [DA] US 5392018 A 19950221 - COLLINS KENNETH S [US], et al
Designated contracting state (EPC)
AT BE CH DE ES FR GB GR IE IT LI NL SE
DOCDB simple family (publication)
US 6027606 A 20000222; EP 0779645 A2 19970618; EP 0779645 A3 19970917; JP H09180897 A 19970711; KR 970052615 A 19970729; US 6193836 B1 20010227
DOCDB simple family (application)
US 10895098 A 19980630; EP 96309031 A 19961211; JP 31219696 A 19961122; KR 19960064103 A 19961211; US 48031300 A 20000110