Global Patent Index - EP 0782542 A1

EP 0782542 A1 19970709 - METHOD OF NITRIDING SILICON

Title (en)

METHOD OF NITRIDING SILICON

Title (de)

VERFAHREN ZUR NITRIDIERUNG VON SILIZIUM

Title (fr)

PROCEDE DE NITRURATION DU SILICIUM

Publication

EP 0782542 A1 19970709 (EN)

Application

EP 95925485 A 19950705

Priority

  • US 9508418 W 19950705
  • US 27061394 A 19940705

Abstract (en)

[origin: WO9601229A1] A process for nitriding materials containing silicon to form a silicon nitride material predominantly in the alpha phase is disclosed which includes nitriding the silicon-containing material by (a) heating the silicon-containing material in an atmosphere containing at least hydrogen in the temperature range of about 0 DEG C to about 800 DEG C and (b) thereafter, nitriding the silicon-containing material by subjecting the silicon-containing material to a nitriding atmosphere containing at least nitrogen gas in the temperature range of from about 1000 DEG C to about 1450 DEG C to effect nitriding.

IPC 1-7

C01B 21/068; C04B 35/591

IPC 8 full level

C01B 21/068 (2006.01); C04B 35/591 (2006.01)

CPC (source: EP)

C01B 21/0682 (2013.01); C04B 35/591 (2013.01)

Citation (search report)

See references of WO 9601229A1

Designated contracting state (EPC)

DE ES FR GB IT

DOCDB simple family (publication)

WO 9601229 A1 19960118; EP 0782542 A1 19970709

DOCDB simple family (application)

US 9508418 W 19950705; EP 95925485 A 19950705