EP 0782768 A1 19970709 - INTEGRATED CIRCUIT STRUCTURE WITH AN ACTIVE MICROWAVE ELEMENT AND AT LEAST ONE PASSIVE ELEMENT
Title (en)
INTEGRATED CIRCUIT STRUCTURE WITH AN ACTIVE MICROWAVE ELEMENT AND AT LEAST ONE PASSIVE ELEMENT
Title (de)
INTEGRIERTE SCHALTUNGSSTRUKTUR MIT EINEM AKTIVEN MIKROWELLENBAUELEMENT UND MINDESTENS EINEM PASSIVEN BAUELEMENT
Title (fr)
STRUCTURE INTEGREE DE CIRCUIT COMPORTANT UN COMPOSANT A MICRO-ONDES ACTIF ET AU MOINS UN COMPOSANT PASSIF
Publication
Application
Priority
- DE 9501213 W 19950906
- DE 4432727 A 19940914
Abstract (en)
[origin: DE4432727C1] The invention concerns a high-resistivity silicon substrate (11) with an active microwave element (16) and at least two metallization planes (12, 14) which are insulated from each other by an insulating layer (13). Surrounded by an earthed lead (122) in one of the metallization planes (12) is a passive element which includes a first metal feature (121) formed in one metallization plane (12) and a second metal feature (141) formed in the other metallization plane (14). The passive element is preferably designed as a capacitor, a coil or a resonator including a capacitor and a coil.
IPC 1-7
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/8222 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 27/095 (2006.01)
CPC (source: EP US)
H01L 27/08 (2013.01 - EP US)
Citation (search report)
See references of WO 9608843A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 4432727 C1 19960314; DE 59509972 D1 20020131; EP 0782768 A1 19970709; EP 0782768 B1 20011219; JP H10505202 A 19980519; US 5969405 A 19991019; WO 9608843 A1 19960321
DOCDB simple family (application)
DE 4432727 A 19940914; DE 59509972 T 19950906; DE 9501213 W 19950906; EP 95929765 A 19950906; JP 50980696 A 19950906; US 79396997 A 19970307