EP 0782769 A1 19970709 - CONTROLLABLE SEMICONDUCTOR COMPONENT
Title (en)
CONTROLLABLE SEMICONDUCTOR COMPONENT
Title (de)
STEUERBARES HALBLEITERBAUELEMENT
Title (fr)
COMPOSANT A SEMI-CONDUCTEUR POUVANT ETRE COMMANDE
Publication
Application
Priority
- DE 4433796 A 19940922
- EP 9503742 W 19950922
Abstract (en)
[origin: DE4433796A1] The invention concerns a semiconductor component which can be controlled on the anode side and whose semiconductor body comprises a plurality of adjacent, parallel-connected unit cells having a thyristor structure. A lightly doped n-base region (3) is adjoined on both sides by highly doped p-regions constituting p-base region (2) and p-emitter region (4). The p-base region (2) is followed by a highly doped n-emitter region (1) which contacts a cathode electrode (7). Integrated in the p-emitter region (4) is a first n-channel MOSFET (M1) which is connected in series with the thyristor structure by means of a floating electrode (FE). The drain electrode (5b) of the first MOSFET (M1) is provided with an outer anode (8) which has no contact with the p-emitter region (4). A second n-channel MOSFET (M2) is integrated between the n-base region (3) and the drain region (5b) of the first MOSFET (M1).
IPC 1-7
IPC 8 full level
H01L 27/04 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/74 (2006.01); H01L 29/747 (2006.01); H01L 29/749 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/0834 (2013.01 - EP US); H01L 29/747 (2013.01 - EP US); H01L 29/749 (2013.01 - EP US)
Citation (search report)
See references of WO 9609649A1
Designated contracting state (EPC)
AT CH DE FR GB LI
DOCDB simple family (publication)
DE 4433796 A1 19960328; EP 0782769 A1 19970709; JP H10505953 A 19980609; US 5923055 A 19990713; WO 9609649 A1 19960328
DOCDB simple family (application)
DE 4433796 A 19940922; EP 9503742 W 19950922; EP 95934099 A 19950922; JP 51060996 A 19950922; US 80984897 A 19970321