EP 0786810 B1 20020807 - Substrate potential detecting circuit
Title (en)
Substrate potential detecting circuit
Title (de)
Detektorschaltung für Substrat-Potential
Title (fr)
Circuit détecteur de potentiel de substrat
Publication
Application
Priority
JP 1152996 A 19960126
Abstract (en)
[origin: EP0786810A1] The disclosed substrate potential detecting circuit can reduce both the power consumption and the pattern area thereof. The substrate potential detecting circuit comprises: a series circuit composed of a plurality of same-conductivity type MOS transistors (21, ... 2n). Each transistor has a source terminal connected to a substrate terminal thereof and a drain terminal connected to a gate terminal thereof. Further, the channel widths of all the MOS transistors are determined equal to each other and so selected that all the transistors can be operative in a sub-threshold region, respectively. <IMAGE>
IPC 1-7
IPC 8 full level
G01R 19/165 (2006.01); G05F 3/20 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H03K 17/30 (2006.01); H03K 19/094 (2006.01)
CPC (source: EP KR US)
G05F 3/205 (2013.01 - EP US); H01L 21/18 (2013.01 - KR); H01L 27/0222 (2013.01 - EP US)
Citation (examination)
- US 5034625 A 19910723 - MIN DONG-SUN [KR], et al
- US 5262989 A 19931116 - LEE YOUNG-TAEK [KR], et al
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0786810 A1 19970730; EP 0786810 B1 20020807; DE 69714486 D1 20020912; DE 69714486 T2 20030508; JP H09205153 A 19970805; KR 100261955 B1 20000715; KR 970060422 A 19970812; US 5936436 A 19990810
DOCDB simple family (application)
EP 97101113 A 19970124; DE 69714486 T 19970124; JP 1152996 A 19960126; KR 19970001884 A 19970123; US 78771197 A 19970124