EP 0786816 B1 20030618 - Bipolar transistor having an improved epitaxial base region and method of fabricating the same
Title (en)
Bipolar transistor having an improved epitaxial base region and method of fabricating the same
Title (de)
Bipolarer Transistor mit einer verbesserten epitaktischen Basiszone und dessen Herstellungsverfahren
Title (fr)
Transistor bipolare ayant une région de base épitaxiale améliorée et sa méthode de fabrication
Publication
Application
Priority
JP 537896 A 19960117
Abstract (en)
[origin: EP0786816A2] A base region structure of a bipolar transistor is formed over both an epitaxial layer (2) having a first conductivity type and an insulation film (4). The base region structure comprises a single layer having a second conductivity type. The single layer comprises both an epitaxial portion (5) extending over said epitaxial layer (2) and a polycrystal portion (6) extending over said insulation film (4). An emitter region (14) is formed at an upper part of said epitaxial portion (5). The epitaxial portion (5) serves as a base region and the polycrystal portion (6) serves as a base plug lead. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/10 (2006.01); H01L 29/73 (2006.01); H01L 29/732 (2006.01)
CPC (source: EP US)
H01L 29/1004 (2013.01 - EP US); H01L 29/66287 (2013.01 - EP US); H01L 29/732 (2013.01 - EP US)
Citation (examination)
- Silicon Processing for the VLSI Era, vol. 1, Lattice Press 1986, p. 264-266
- Silicon Processing for the VLSI Era, vol. 2, Lattice Press 1990, p. 510-515
Designated contracting state (EPC)
DE NL
DOCDB simple family (publication)
EP 0786816 A2 19970730; EP 0786816 A3 19980121; EP 0786816 B1 20030618; DE 69722833 D1 20030724; DE 69722833 T2 20040506; JP 2937253 B2 19990823; JP H09199510 A 19970731; US 5789800 A 19980804
DOCDB simple family (application)
EP 97100686 A 19970117; DE 69722833 T 19970117; JP 537896 A 19960117; US 78561197 A 19970117