EP 0792028 A3 20011212 - Solid-state antenna switch and field-effect transistor
Title (en)
Solid-state antenna switch and field-effect transistor
Title (de)
Halbleiterantennenschalter und Feldeffekttransistor
Title (fr)
Commutateur d'antenne à semi-conducteur et transistor à effet de champ
Publication
Application
Priority
JP 3322196 A 19960221
Abstract (en)
[origin: EP0792028A2] A field-effect transistor has a covering electrode overlying at least part of the transistor's channel. The covering electrode is formed on an insulating layer that covers the source, gate, and drain of the transistor. One voltage is applied to the covering electrode when the field-effect transistor is switched on. Another voltage is applied when the field-effect transistor is switched off, creating an electric field that hinders current flow in the channel. In an antenna switch, this type of transistor couples an antenna to a receiving circuit, and another transistor couples the antenna to a transmitting circuit. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/338 (2006.01); H01L 27/04 (2006.01); H01L 29/812 (2006.01); H01Q 1/00 (2006.01); H01Q 3/00 (2006.01); H01Q 23/00 (2006.01); H03K 17/687 (2006.01); H04B 1/3822 (2015.01); H04B 1/40 (2015.01); H04B 1/48 (2006.01)
CPC (source: EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/402 (2013.01 - EP US); H01L 29/8124 (2013.01 - EP US); H03K 17/687 (2013.01 - EP US); H04B 1/48 (2013.01 - EP US)
Citation (search report)
- [A] US 4947232 A 19900807 - ASHIDA TSUTOMU [JP], et al
- [A] US 4757362 A 19880712 - BIWA TETUO [JP], et al
- [A] EP 0409374 A2 19910123 - MITSUBISHI ELECTRIC CORP [JP]
- [A] KOHAMA K ET AL: "HIGH POWER DPDT ANTENNA SWITCH MMIC FOR DIGITAL CELLULAR SYSTEMS", IEEE GALLIUM ARSENIDE INTEGRATED CIRCUITS (GAAS IC) SYMPOSIUM. 17TH. ANNUAL TECHNICAL DIGEST 1995. SAN DIEGO, OCT. 29 - NOV. 1, 1995, NEW YORK, IEEE, US, vol. SYMP. 17, 29 October 1995 (1995-10-29), pages 75 - 78, XP000630154, ISBN: 0-7803-2967-8
- [A] UDA H ET AL: "HIGH-PERFORMANCE GAAS SWITCH ICS FABRICATED USING MESFETS WITH TWO KINDS OF PINCH-OFF VOLTAGES", PROCEEDINGS OF THE GALLIUM ARSENIDE INTEGRATED CIRCUITS SYMPOSIUM. (GAAS IC). SAN JOSE, OCT. 10 - 13, 1993, NEW YORK, IEEE, US, vol. SYMP. 15, 10 October 1993 (1993-10-10), pages 247 - 250, XP000462982
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0792028 A2 19970827; EP 0792028 A3 20011212; CN 1113417 C 20030702; CN 1166694 A 19971203; JP H09232827 A 19970905; KR 100325087 B1 20020905; KR 970063583 A 19970912; US 5872369 A 19990216
DOCDB simple family (application)
EP 97101898 A 19970206; CN 97102822 A 19970221; JP 3322196 A 19960221; KR 19970003625 A 19970205; US 79184597 A 19970130