EP 0797842 A1 19971001 - A METHOD OF FABRICATING LDD MOS TRANSISTORS UTILIZING HIGH ENERGY ION IMPLANT THROUGH AN OXIDE LAYER
Title (en)
A METHOD OF FABRICATING LDD MOS TRANSISTORS UTILIZING HIGH ENERGY ION IMPLANT THROUGH AN OXIDE LAYER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES LDD-MOS-TRANSISTORS MITTELS HOCHENERGETISCHER IONENIMPLANTATION DURCH EINE OXIDSCHICHT
Title (fr)
PROCEDE DE FABRICATION DE TRANSISTORS MOS A DRAIN FAIBLEMENT DOPE (LDD) PAR IMPLANTATION D'IONS A HAUTE ENERGIE A TRAVERS UNE COUCHE D'OXIDE
Publication
Application
Priority
- US 9515299 W 19951122
- US 35767694 A 19941216
Abstract (en)
[origin: WO9619011A1] A method of fabricating a MOS integrated circuit device utilizes high energy, high current implanting of ions through a layer of oxide to form heavily doped source and drain regions which are self-aligned with a polysilicon gate. A thick portion of the oxide layer adjacent to the polysilicon gate prevents heavy doping in the substrate next to the gate. The oxide layer is removed and a liightly doped drain (LDD) implant forms an LDD region which is self-aligned with the gate. Using this method the source/drain and LDD implants are performed using only a single mask and etch operation, rater than two mask and etch operations which are necessary using a conventional process.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/8238 (2006.01)
CPC (source: EP)
H01L 21/823814 (2013.01); H01L 29/6659 (2013.01)
Citation (search report)
See references of WO 9619011A1
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
DOCDB simple family (application)
US 9515299 W 19951122; EP 95942891 A 19951122