EP 0807317 A2 19971119 - METHOD FOR PURGING A MULTI-LAYER SACRIFICIAL ETCHED SILICON SUBSTRATE
Title (en)
METHOD FOR PURGING A MULTI-LAYER SACRIFICIAL ETCHED SILICON SUBSTRATE
Title (de)
VERFAHREN ZUM BESEITIGEN EINES VIELLAGIGEN GEÄTZTEN OPFERSUBSTRATES AUS SILIZIUM
Title (fr)
PROCEDE PERMETTANT DE PURGER UN SUBSTRAT SACRIFICIEL MULTICOUCHE AU SILICIUM SOUMIS A UNE ATTAQUE ACIDE
Publication
Application
Priority
- US 9618508 W 19961118
- US 56478995 A 19951129
Abstract (en)
[origin: WO9722140A2] An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of etching and bonding processes. The processes entail ion implantation and formation of an oxide support layer (40, 42, 44) below the proofmass, integrally bonding two complementary proofmass (62) and substrate structures together, and then removing the oxide support layer (40, 42, 44) to leave the proofmass (62) supported by the hinge (67) within the body of silicon material (12). In a bond and etch back process, the wafer (532) is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer. During fabrication of the composite wafer (900), the wafer (900) is mounted to a centrifuge (902), and spun to remove etchant. The centrifuge (902) is constructed from a bar shape platform (904) that is rotated by a motor (906). Two compartments (910) are lined with filter paper (912, 914, 916) that contain the composite wafers (900), and are covered by lid (918).
IPC 1-7
IPC 8 full level
G01P 15/08 (2006.01); G01P 15/125 (2006.01); H01L 21/306 (2006.01); H01L 49/00 (2006.01)
CPC (source: EP KR)
G01P 15/0802 (2013.01 - EP); G01P 15/125 (2013.01 - EP); H01L 21/304 (2013.01 - KR)
Designated contracting state (EPC)
CH DE FR GB IT LI NL SE
DOCDB simple family (publication)
WO 9722140 A2 19970619; WO 9722140 A3 19970814; AU 1120697 A 19970703; CA 2211397 A1 19970619; EP 0807317 A2 19971119; EP 0807317 A4 19981230; JP H10505467 A 19980526; KR 19980701751 A 19980625; TW 345703 B 19981121
DOCDB simple family (application)
US 9618508 W 19961118; AU 1120697 A 19961118; CA 2211397 A 19961118; EP 96942020 A 19961118; JP 52204597 A 19961118; KR 19970705147 A 19970729; TW 86105941 A 19970505