EP 0807972 A2 19971119 - Semiconductor device and method of its fabrication
Title (en)
Semiconductor device and method of its fabrication
Title (de)
Halbleiteranordnung und Herstellungsverfahren
Title (fr)
Dispositif semi-conducteur et procédé de fabrication
Publication
Application
Priority
- JP 11458696 A 19960509
- JP 10008397 A 19970417
Abstract (en)
In a plastic packaged semiconductor device, a chip support formed on the same lead frame as leads (3) is disposed so as to extend over the surface of a semiconductor element (1), the chip support is bonded and fixed to the surface of a polyimide wafer coat (9) on the semiconductor element (1) by means of an insulating tape, the leads (3) are brought into contact with the polyimide wafer coat (9) on the semiconductor element (1) without being fixed, the leads (3) and the electrodes of the semiconductor element (1) are connected by means of gold wires (6), and these are packaged by a packaging material (7). Generation of crack in the sealing material thereby prevented, and the thickness of the plastic packaged semiconductor device is reduced. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 23/495 (2006.01)
CPC (source: EP KR US)
H01L 23/28 (2013.01 - KR); H01L 23/4951 (2013.01 - EP US); H01L 23/49551 (2013.01 - EP US); H01L 24/32 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 24/45 (2013.01 - EP US); H01L 2224/32014 (2013.01 - EP US); H01L 2224/32245 (2013.01 - EP US); H01L 2224/45144 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/4826 (2013.01 - EP US); H01L 2224/48465 (2013.01 - EP US); H01L 2224/48599 (2013.01 - EP US); H01L 2224/73215 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US)
Citation (applicant)
- JP H05315526 A 19931126 - HITACHI LTD
- JP H0653264 A 19940225 - SONY CORP
- US 5068712 A 19911126 - MURAKAMI GEN [JP], et al
- JP H0689947 A 19940329 - TOSHIBA CORP
- JP H01134958 A 19890526 - HITACHI LTD
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0807972 A2 19971119; EP 0807972 A3 20000531; EP 0807972 B1 20091014; DE 69739619 D1 20091126; EP 1381084 A1 20040114; KR 100373891 B1 20030618; KR 19980079223 A 19981125; US 5969410 A 19991019; US 6258621 B1 20010710
DOCDB simple family (application)
EP 97107671 A 19970509; DE 69739619 T 19970509; EP 03022551 A 19970509; KR 19970017636 A 19970508; US 24061299 A 19990201; US 84828697 A 19970429