EP 0811250 A1 19971210 - SEMICONDUCTOR DEVICE WITH A ROUGHENED SEMICONDUCTIVE SURFACE
Title (en)
SEMICONDUCTOR DEVICE WITH A ROUGHENED SEMICONDUCTIVE SURFACE
Title (de)
HALBLEITERVORRICHTUNG MIT AUFGERAUHTER HALBLEITEROBERFLÄCHE
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR A SURFACE SEMI-CONDUCTRICE RUGUEUSE
Publication
Application
Priority
- DE 9600137 W 19960131
- DE 19506323 A 19950223
Abstract (en)
[origin: DE19506323A1] A semiconductor device has a semiconductor body of which at least part of the non metallised contact surface is roughened. The metallised contact layer is made of a base metallic material such as aluminium. A process that does not attack the metallised contact surface is used to roughen the semiconductive surface.
IPC 1-7
IPC 8 full level
H01L 29/06 (2006.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01)
CPC (source: EP KR US)
H01L 29/0657 (2013.01 - EP US); H01L 33/00 (2013.01 - KR); H01L 33/22 (2013.01 - EP US); H01L 33/40 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/10156 (2013.01 - EP US); H01L 2924/10157 (2013.01 - EP US)
Citation (search report)
See references of WO 9626550A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
DE 19506323 A1 19960829; EP 0811250 A1 19971210; JP 3657270 B2 20050608; JP H11500581 A 19990112; KR 19980702427 A 19980715; TW 299456 B 19970301; US 6140248 A 20001031; US 6309953 B1 20011030; WO 9626550 A1 19960829
DOCDB simple family (application)
DE 19506323 A 19950223; DE 9600137 W 19960131; EP 96901222 A 19960131; JP 52528496 A 19960131; KR 19970705826 A 19970822; TW 85101564 A 19960208; US 51729900 A 20000302; US 91825197 A 19970825