EP 0814499 A1 19971229 - Semiconductor device and method of manufacturing the same
Title (en)
Semiconductor device and method of manufacturing the same
Title (de)
Halbleitervorrichtung und Herstellungsverfahren
Title (fr)
Dispositif semi-conducteur et procédé de fabrication
Publication
Application
Priority
JP 15531696 A 19960617
Abstract (en)
An isolation (2) is formed in a part of a P-well (1) of a semiconductor substrate. A resistor film (4a) as a first conductor member is formed on the isolation (2). An insulating film (5b) covering the resistor film (4a) except for contact formation regions and an upper electrode film (6b) as a second conductor member are formed simultaneously with the formation of a gate electrode (6a) and a gate oxide film (5a). Silicide films (11a)-(11d) of a refractory metal are formed on the respective surfaces of the gate electrode (6a), N-type high-concentration diffusion layers (10), the contact formation regions of the resistor film (4a), and the upper electrode film (6b). By utilizing a salicide process, a resistor and an inductor each occupying a small area can be formed without lowering the resistance of the resistor film (4a). A capacitor, the resistor, and like component are selectively allowed to function. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 27/118 (2006.01)
CPC (source: EP KR US)
H01L 27/0629 (2013.01 - EP US); H01L 27/118 (2013.01 - EP US); H01L 28/10 (2013.01 - EP US); H01L 28/20 (2013.01 - EP US); H01L 28/40 (2013.01 - EP US); H01L 29/06 (2013.01 - KR); Y02E 10/547 (2013.01 - EP)
Citation (search report)
- [X] US 4866502 A 19890912 - TOMASZEWSKI ZBIGNIEW [DE], et al
- [X] EP 0199231 A1 19861029 - SIEMENS AG [DE]
- [X] US 5500387 A 19960319 - TUNG YINGSHENG [US], et al
- [AD] US 4949153 A 19900814 - HIRAO TADASHI [JP], et al
- [A] US 5384274 A 19950124 - KANEHACHI KAORU [JP]
- [A] US 5391906 A 19950221 - NATSUME KIYOSHI [JP]
- [A] PATENT ABSTRACTS OF JAPAN vol. 016, no. 271 (E - 1218) 18 June 1992 (1992-06-18)
Designated contracting state (EPC)
BE DE FR GB NL
DOCDB simple family (publication)
EP 0814499 A1 19971229; JP 3719618 B2 20051124; JP H104179 A 19980106; KR 100519149 B1 20060421; KR 980006462 A 19980330; TW 346683 B 19981201; US 6083785 A 20000704; US 6603172 B1 20030805
DOCDB simple family (application)
EP 97109790 A 19970616; JP 15531696 A 19960617; KR 19970025175 A 19970617; TW 86108444 A 19970617; US 53630100 A 20000327; US 87491197 A 19970616