EP 0814507 A1 19971229 - Trench capacitor DRAM cell and method of making the same
Title (en)
Trench capacitor DRAM cell and method of making the same
Title (de)
Grabenkondensator-Speicherzelle und Verfahren zur Herstellung derselben
Title (fr)
Cellule DRAM à condensateur empilé et procédé de fabrication
Publication
Application
Priority
US 66754196 A 19960621
Abstract (en)
Method for forming three-dimensional device structures such as a trench capacitor DRAM cell comprising a second device (370) formed over a first device (315) is disclosed. A layer (350,355) having a single crystalline top surface (350) is formed above the first device (315) to provide the base for forming the active area of the second device. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/822 (2006.01); H01L 21/8242 (2006.01); H01L 27/00 (2006.01); H01L 27/04 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP US)
H10B 12/038 (2023.02 - EP US); H10B 12/373 (2023.02 - EP US)
Citation (search report)
- [X] EP 0526790 A2 19930210 - IBM [US]
- [X] US 4728623 A 19880301 - LU NICKY C [US], et al
- [A] US 5372966 A 19941213 - KOHYAMA YUSUKE [JP]
- [A] PATENT ABSTRACTS OF JAPAN vol. 17, no. 657 (E - 1470) 6 December 1993 (1993-12-06)
- [A] PATENT ABSTRACTS OF JAPAN vol. 95, no. 6 31 July 1995 (1995-07-31)
- [A] PATENT ABSTRACTS OF JAPAN vol. 13, no. 68 (E - 716)<3416> 16 February 1989 (1989-02-16)
Designated contracting state (EPC)
AT BE CH DE LI
DOCDB simple family (publication)
EP 0814507 A1 19971229; CN 1182959 A 19980527; JP H1074907 A 19980317; KR 980002967 A 19980330; US 5792685 A 19980811
DOCDB simple family (application)
EP 97304339 A 19970620; CN 97117881 A 19970621; JP 16576497 A 19970623; KR 19970025986 A 19970620; US 66754196 A 19960621