EP 0814547 A1 19971229 - SEMICONDUCTOR LASER AND PROCESS FOR PRODUCING THE SAME
Title (en)
SEMICONDUCTOR LASER AND PROCESS FOR PRODUCING THE SAME
Title (de)
HALBLEITERLASER UND DESSEN HERSTELLUNGSVERFAHREN
Title (fr)
LASER A SEMI-CONDUCTEUR ET PROCEDE DE FABRICATION CORRESPONDANT
Publication
Application
Priority
- JP 9603837 W 19961226
- JP 34283895 A 19951228
- JP 24173296 A 19960912
Abstract (en)
In a semiconductor laser device 100, an n-type InGaAsP light confinement layer 2, a multiple quantum well active layer 3, a p-type InGaAsP light confinement layer 4, and a p-type InP cladding layer 5 are formed on an n-type InP substrate 1 to be in a mesa structure extending in stripes along the cavity length direction. Moreover, regions on both sides of this striped mesa are buried with a p-type InP current blocking layer 6 and an n-type InP current blocking layer 7. Furthermore, a p-type InP burying layer 8 and a p-type InGaAsP contact layer 9 are formed thereon. The oscillation wavelength of the semiconductor laser device 100 is around 1.3 mu m. The stripe width of the active layer 3 is such that the width W1 at the front end face and the width W2 at the rear end face have a relationship of W1<W2, and the stripe width is continuously reduced from W2 to W1 along the cavity length direction. Thus, a semiconductor laser device is provided which has a very narrow beam divergence and a low threshold current and generates a high optical output. <IMAGE>
IPC 1-7
IPC 8 full level
H01S 5/12 (2021.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/227 (2006.01); H01S 5/323 (2006.01)
CPC (source: EP US)
H01S 5/0202 (2013.01 - EP); H01S 5/10 (2013.01 - US); H01S 5/1014 (2013.01 - EP US); H01S 5/1064 (2013.01 - EP); H01S 5/12 (2013.01 - EP US); H01S 5/2036 (2013.01 - EP); H01S 5/04252 (2019.07 - EP US); H01S 5/1064 (2013.01 - US); H01S 5/1206 (2013.01 - EP US); H01S 5/1215 (2013.01 - EP US); H01S 5/1218 (2013.01 - EP US); H01S 5/1225 (2013.01 - EP US); H01S 5/1228 (2013.01 - EP US); H01S 5/20 (2013.01 - EP US); H01S 5/2036 (2013.01 - US); H01S 5/2275 (2013.01 - EP US); H01S 5/32391 (2013.01 - EP US); H01S 2301/176 (2013.01 - EP); H01S 2301/18 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
US 6104738 A 20000815; DE 69635410 D1 20051215; DE 69635410 T2 20060727; EP 0814547 A1 19971229; EP 0814547 A4 19990324; EP 0814547 B1 20051109; JP 3140788 B2 20010305; WO 9724787 A1 19970710
DOCDB simple family (application)
US 89476397 A 19971113; DE 69635410 T 19961226; EP 96943318 A 19961226; JP 52419097 A 19961226; JP 9603837 W 19961226