Global Patent Index - EP 0815595 A4

EP 0815595 A4 19990506 - UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR

Title (en)

UNCOOLED YBaCuO THIN FILM INFRARED DETECTOR

Title (de)

UNGEKÜHLTER YBaCuO DÜNNSCHICHT-INFRAROTDETEKTOR

Title (fr)

DETECTEUR DE RAYONNEMENT INFRAROUGE A COUCHE MINCE DE YBaCuO NON REFROIDI

Publication

EP 0815595 A4 19990506 (EN)

Application

EP 95944126 A 19951229

Priority

  • US 9516399 W 19951229
  • US 38220095 A 19950201
  • US 42495 P 19950622

Abstract (en)

[origin: CA2212002A1] A thermal detector (B) includes a transducer layer (2) of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide (34) forms a gate insulator layer and increases capacitance of the transistor or latches of the transistor according to the polarization direction of the ferroelectric layer.

IPC 1-7

H01L 29/12; H01L 29/76; H01L 29/74; H01L 31/062; H01L 31/113; H01L 31/119; H01L 31/058; H01L 31/0288

IPC 8 full level

G01J 1/02 (2006.01); G01J 1/42 (2006.01); G01J 1/44 (2006.01); G01J 5/02 (2006.01); G01J 5/20 (2006.01); G01J 5/34 (2006.01); H01L 21/8246 (2006.01); H01L 21/8247 (2006.01); H01L 27/105 (2006.01); H01L 27/14 (2006.01); H01L 27/16 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 31/032 (2006.01); H01L 31/09 (2006.01); H01L 37/00 (2006.01); H01L 37/02 (2006.01)

CPC (source: EP US)

G01J 5/20 (2013.01 - EP); G01J 5/34 (2013.01 - EP US); H01L 31/032 (2013.01 - EP); H01L 31/095 (2013.01 - EP); H10N 19/00 (2023.02 - EP)

Citation (search report)

  • [Y] COLE B ET AL: "HIGH PERFORMANCE INFRARED DETECTOR ARRAYS USING THIN FILM MICROSTRUCTURES", PROCEEDINGS OF THE NINTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF), UNIVERSITY PARK, PENNSYLVANIA, AUG. 7 - 10. 1994, no. SYMP. 9, 7 August 1994 (1994-08-07), PANDEY R K;LIU M; AHMAD SAFARI, pages 653 - 656, XP000553184
  • [Y] ULLRICH B ET AL: "Photocurrent in thin YBa/sub 2/Cu/sub 3/O/sub 6/ films on sapphire", JAPANESE JOURNAL OF APPLIED PHYSICS, PART 2 (LETTERS), 1 JULY 1992, JAPAN, vol. 31, no. 7A, ISSN 0021-4922, pages L856 - L859, XP002078477
  • [Y] MIHAILOVIC D ET AL: "Characterization of the pyroelectric effect in YBa/sub 2/Cu/sub 3/O/sub 7- delta /", PHYSICAL REVIEW B (CONDENSED MATTER), 1 DEC. 1993, USA, vol. 48, no. 22, ISSN 0163-1829, pages 16634 - 16640, XP002092521
  • [A] ULLRICH B ET AL: "SEMICONDUCTING YBA2CU3O6 FILMS: A NEW MATERIAL", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 1 August 1992 (1992-08-01), pages 716 - 717, XP000312311
  • [XP] SHAN P C ET AL: "SEMICONDUCTING YBACUO THIN FILMS FOR UNCOOLED INFRARED BOLOMETERS", JOURNAL OF APPLIED PHYSICS, vol. 78, no. 12, 15 December 1995 (1995-12-15), pages 7334 - 7339, XP000543649
  • See also references of WO 9624165A1

Designated contracting state (EPC)

DE FR GB IE NL

DOCDB simple family (publication)

AU 4600696 A 19960821; CA 2212002 A1 19960808; CA 2212002 C 20031007; EP 0815595 A1 19980107; EP 0815595 A4 19990506; JP 2003332573 A 20031121; JP 3442080 B2 20030902; JP H11500578 A 19990112

DOCDB simple family (application)

AU 4600696 A 19951229; CA 2212002 A 19951229; EP 95944126 A 19951229; JP 2003067190 A 20030312; JP 52352196 A 19951229