EP 0821460 A3 19980408 - Current source
Title (en)
Current source
Title (de)
Stromquelle
Title (fr)
Source de courant
Publication
Application
Priority
CH 181196 A 19960719
Abstract (en)
[origin: EP0821460A2] The current source has a cascode transistor (T2) whose gate is connected via a first switch (S1) to the drain of an amplifier transistor (T3), whose gate is connected via a second switch (S2) to the drain of a current source transistor (T1). The cascode transistor gate is also connected via a third switch (S3), when a PMOS transistor is used, to an operating voltage (Vdd), or, when an NMOS, to earth. In the on state the first and second switches are closed and the third is open. In the off state the first and second switches are open and the third is closed.
IPC 1-7
IPC 8 full level
G05F 1/10 (2006.01); G05F 3/24 (2006.01); H02J 1/04 (2006.01); H02J 3/10 (2006.01)
CPC (source: EP)
G05F 3/242 (2013.01)
Citation (search report)
- [A] EP 0637874 A1 19950208 - SIEMENS AG [DE]
- [A] EP 0722221 A2 19960717 - NEC CORP [JP]
- [DA] SÄCKINGER ET AL: "a high-swing, high-impedance mos cascode circuit", IEEE JOURNAL OF SOLID STATE CIRCUITS, vol. 25, no. 1, February 1990 (1990-02-01), NEW-YORK, pages 289 - 298, XP000101879
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0821460 A2 19980128; EP 0821460 A3 19980408; EP 0821460 B1 20020619; AT E219610 T1 20020715; CZ 223297 A3 19980218; DE 59707548 D1 20020725; PL 183356 B1 20020628; PL 320932 A1 19980202
DOCDB simple family (application)
EP 97111124 A 19970703; AT 97111124 T 19970703; CZ 223297 A 19970715; DE 59707548 T 19970703; PL 32093297 A 19970703