Global Patent Index - EP 0831529 A3

EP 0831529 A3 20000202 - Semiconductor device and method of manufacturing the same

Title (en)

Semiconductor device and method of manufacturing the same

Title (de)

Halbleiteranordnung und deren Herstellungsverfahren

Title (fr)

Dispositif semi-conducteur et procédé de sa fabrication

Publication

EP 0831529 A3 (EN)

Application

EP 97115629 A

Priority

JP 23940396 A

Abstract (en)

[origin: EP0831529A2] A plurality of metal wires are formed on an underlying interlayer insulating film. Areas among the metal wires are filled with a buried insulating film of a silicon oxide film with a small dielectric constant (i.e., a first dielectric film), and thus, a parasitic capacitance of the metal wires can be decreased. On the buried insulating film, a passivation film of a silicon nitride film with high moisture absorption resistance (i.e., a second dielectric film) is formed, and thus, a coverage defect can be avoided. A bonding pad is buried in an opening formed in a part of a surface protecting film including the buried insulating film and the passivation film, so as not to expose the buried insulating film within the opening. Thus, moisture absorption through the opening can be prevented. In this manner, the invention provides a semiconductor device which has a small parasitic capacitance in an area with a small pitch between the metal wires and is free from a coverage defect as well as the moisture absorption through the opening for the bonding pad, and a method of manufacturing the semiconductor device. <IMAGE>

IPC 1-7

H01L 23/485; H01L 23/522

IPC 8 full level

H01L 21/60 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01); H01L 21/3205 (2006.01); H01L 23/485 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01)

CPC (source: EP)

H01L 23/3192 (2013.01); H01L 23/5222 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 23/3171 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/30105 (2013.01); Y10S 257/915 (2013.01)

C-Set (source: EP)

H01L 2224/05624 + H01L 2924/00014

 

Citation (search report)

Designated contracting state (EPC)

AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

EP 0831529 A2 19980325; EP 0831529 A3 20000202; EP 0831529 B1 20090415; DE 69739354 D1 20090528; JP 3305211 B2 20020722; JP H1092817 A 19980410; KR 100411782 B1 20040429; KR 19980024496 A 19980706; US 5989992 A 19991123; US 6232656 B1 20010515; US RE39932 E 20071204; US RE41980 E 20101207

DOCDB simple family (application)

EP 97115629 A 19970909; DE 69739354 T 19970909; JP 23940396 A 19960910; KR 19970046524 A 19970910; US 38783499 A 19990901; US 43834803 A 20030515; US 92544297 A 19970908; US 98455107 A 20071119