EP 0831529 A3 20000202 - Semiconductor device and method of manufacturing the same
Title (en)
Semiconductor device and method of manufacturing the same
Title (de)
Halbleiteranordnung und deren Herstellungsverfahren
Title (fr)
Dispositif semi-conducteur et procédé de sa fabrication
Publication
Application
Priority
JP 23940396 A 19960910
Abstract (en)
[origin: EP0831529A2] A plurality of metal wires are formed on an underlying interlayer insulating film. Areas among the metal wires are filled with a buried insulating film of a silicon oxide film with a small dielectric constant (i.e., a first dielectric film), and thus, a parasitic capacitance of the metal wires can be decreased. On the buried insulating film, a passivation film of a silicon nitride film with high moisture absorption resistance (i.e., a second dielectric film) is formed, and thus, a coverage defect can be avoided. A bonding pad is buried in an opening formed in a part of a surface protecting film including the buried insulating film and the passivation film, so as not to expose the buried insulating film within the opening. Thus, moisture absorption through the opening can be prevented. In this manner, the invention provides a semiconductor device which has a small parasitic capacitance in an area with a small pitch between the metal wires and is free from a coverage defect as well as the moisture absorption through the opening for the bonding pad, and a method of manufacturing the semiconductor device. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/316 (2006.01); H01L 21/318 (2006.01); H01L 21/3205 (2006.01); H01L 21/60 (2006.01); H01L 23/485 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01)
CPC (source: EP KR US)
H01L 21/02164 (2013.01 - KR); H01L 21/02271 (2013.01 - KR); H01L 21/304 (2013.01 - KR); H01L 21/32115 (2013.01 - KR); H01L 21/76829 (2013.01 - KR); H01L 21/76846 (2013.01 - KR); H01L 21/76877 (2013.01 - KR); H01L 21/76895 (2013.01 - KR); H01L 23/3171 (2013.01 - KR); H01L 23/3192 (2013.01 - EP KR US); H01L 23/5222 (2013.01 - EP US); H01L 24/03 (2013.01 - EP KR US); H01L 24/05 (2013.01 - EP US); H01L 23/3171 (2013.01 - EP US); H01L 2224/05624 (2013.01 - EP US); H01L 2224/05644 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01075 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/05042 (2013.01 - EP US); H01L 2924/12044 (2013.01 - EP US); H01L 2924/30105 (2013.01 - EP US); Y10S 257/915 (2013.01 - EP US)
Citation (search report)
- [XY] US 4761386 A 19880802 - BUYNOSKI MATTHEW S [US]
- [Y] US 5472913 A 19951205 - HAVEMANN ROBERT H [US], et al
- [Y] US 5527737 A 19960618 - JENG SHIN-PUU [US]
- [A] US 5136364 A 19920804 - BYRNE ROBERT C [US]
- [A] US 5445994 A 19950829 - GILTON TERRY L [US]
- [A] EP 0514888 A1 19921125 - CANON KK [JP]
- [E] EP 0825646 A2 19980225 - TOSHIBA KK [JP]
- [X] WO 9619826 A1 19960627 - NAT SEMICONDUCTOR CORP [US]
- [A] US 5371047 A 19941206 - GRECO STEPHEN E [US], et al
- [X] PATENT ABSTRACTS OF JAPAN vol. 012, no. 089 (E - 592) 23 March 1988 (1988-03-23)
- [A] PATENT ABSTRACTS OF JAPAN vol. 1995, no. 08 29 September 1995 (1995-09-29)
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0831529 A2 19980325; EP 0831529 A3 20000202; EP 0831529 B1 20090415; DE 69739354 D1 20090528; JP 3305211 B2 20020722; JP H1092817 A 19980410; KR 100411782 B1 20040429; KR 19980024496 A 19980706; US 5989992 A 19991123; US 6232656 B1 20010515; US RE39932 E 20071204; US RE41980 E 20101207
DOCDB simple family (application)
EP 97115629 A 19970909; DE 69739354 T 19970909; JP 23940396 A 19960910; KR 19970046524 A 19970910; US 38783499 A 19990901; US 43834803 A 20030515; US 92544297 A 19970908; US 98455107 A 20071119