EP 0833343 A3 20050817 - A NOR gate applied to a sub-decoder of a semiconductor memory
Title (en)
A NOR gate applied to a sub-decoder of a semiconductor memory
Title (de)
An einem Subdekodierer eines Halbleiterspeichers angekoppeltes NOR-Gatter
Title (fr)
Porte NON/OU couplée à un sous-décodeur d'une mémoire à semi-conducteurs
Publication
Application
Priority
JP 27893496 A 19960930
Abstract (en)
[origin: EP0833343A2] To eliminate the momentary drop of the positive power supply due to instantaneous discharge of floating nodes of NOR gates in a sub-decoder to improve rising up of word lines of a semiconductor memory, a NOR gate of the invention comprises a serial connection of two pMOS transistors (MP1 and MP2), a parallel connection of two nMOS transistors (MN1 and MN2) and a nMOS transistor (MN3) for bypassing floating charge of connection point of the two pMOS transistors. The serial connection of the pMOS transistors and the parallel connection of the nMOS transistors are connected between a positive power supply (Vcc) and a negative power supply (Vss). A main decoder signal (S1) gates one of the pMOS transistors connected to the positive power supply, one of the parallel connection of the nMOS transistors and the nMOS transistor for bypassing the floating charge. A pre-decoder signal (S2) gates other MOS transistors. A word line (WL) is connected to connection point between serial connection of the pMOS transistors and the parallel connection of the nMOS transistors. <IMAGE>
IPC 1-7
IPC 8 full level
G11C 11/413 (2006.01); G11C 8/10 (2006.01); G11C 11/407 (2006.01); G11C 11/408 (2006.01); G11C 11/418 (2006.01); H01L 27/10 (2006.01); H03K 19/0948 (2006.01); H03K 19/20 (2006.01); H10B 12/00 (2023.01)
CPC (source: EP KR)
G11C 8/10 (2013.01 - EP); G11C 11/40 (2013.01 - KR); G11C 11/418 (2013.01 - EP); H03K 19/0948 (2013.01 - EP)
Citation (search report)
- [YA] US 5077495 A 19911231 - TORIMARU YASUO [JP], et al
- [YA] US 4618784 A 19861021 - CHAPPELL BARBARA A [US], et al
- [A] US 4731761 A 19880315 - KOBAYASHI TOSHIFUMI [JP]
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0833343 A2 19980401; EP 0833343 A3 20050817; JP 2865080 B2 19990308; JP H10106268 A 19980424; KR 100300830 B1 20010903; KR 19980025099 A 19980706
DOCDB simple family (application)
EP 97116881 A 19970929; JP 27893496 A 19960930; KR 19970049544 A 19970929