Global Patent Index - EP 0837507 B1

EP 0837507 B1 20040818 - A bipolar power transistor with buried base and interdigitated geometry

Title (en)

A bipolar power transistor with buried base and interdigitated geometry

Title (de)

Leistungsbipolartransistor mit vergrabener Basis und ineinandergreifender Geometrie

Title (fr)

Transistor bipolaire de puissance à base enterrée et géometrie interdigitée

Publication

EP 0837507 B1 20040818 (EN)

Application

EP 96830536 A 19961018

Priority

EP 96830536 A 19961018

Abstract (en)

[origin: EP0837507A1] A bipolar power transistor of interdigitated geometry having a buried P type base region (320), a buried N type emitter region (325), a P type base-contact region (330), an N type emitter-contact region (335, 355), connected to an emitter electrode (370) and an N type connection region (340) disposed around the emitter-contact region (335, 355). The emitter region (325) is buried within the base region (320) in such a way that the buried emitter region (325) and the connection region (340) delimit a P type screen region (345); the transistor further includes a biasing P type region (350) in contact with the emitter electrode (370), which extends up to the screen region (345). <IMAGE>

IPC 1-7

H01L 29/73; H01L 21/331

IPC 8 full level

H01L 21/331 (2006.01); H01L 29/73 (2006.01); H01L 29/732 (2006.01)

CPC (source: EP)

H01L 29/66303 (2013.01); H01L 29/7304 (2013.01)

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

EP 0837507 A1 19980422; EP 0837507 B1 20040818; DE 69633181 D1 20040923; JP H10125692 A 19980515; US 5998855 A 19991207

DOCDB simple family (application)

EP 96830536 A 19961018; DE 69633181 T 19961018; JP 27899497 A 19971013; US 95168697 A 19971016