EP 0840364 A1 19980506 - Method of forming a semiconductor device
Title (en)
Method of forming a semiconductor device
Title (de)
Verfahren zur Herstellung einer Halbleiteranordnung
Title (fr)
Procédé de fabrication d'un composant à semi-conducteur
Publication
Application
Priority
US 74052696 A 19961030
Abstract (en)
A surface (13) of a semiconductor wafer (11) is sandblasted in order to remove material and form trenches (19) in the surface (13). A sandblasting resistant mask (14) is used to mask the surface (13) during the sandblasting operation. <IMAGE>
IPC 1-7
IPC 8 full level
B24C 1/04 (2006.01); B24C 11/00 (2006.01); G03F 7/12 (2006.01); H01L 21/304 (2006.01)
CPC (source: EP)
B24C 1/04 (2013.01); B24C 11/00 (2013.01); G03F 7/12 (2013.01); H01L 21/3046 (2013.01)
Citation (search report)
- [A] US 5506720 A 19960409 - YOON DONG-SEON [KR]
- [A] EP 0130559 A2 19850109 - ASAHI CHEMICAL IND [JP]
- [PA] EP 0741332 A1 19961106 - MATSUSHITA ELECTRONICS CORP [JP], et al
- [X] ANONYMOUS: "Semiconductor Wafer Marking Through a Tape Stencil by Sand Blasting. May 1975.", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 17, no. 12, May 1975 (1975-05-01), NEW YORK, US, pages 3631, XP002049894
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0840364 A1 19980506; CA 2217084 A1 19980430; JP H10135160 A 19980522; KR 19980032599 A 19980725
DOCDB simple family (application)
EP 97117871 A 19971015; CA 2217084 A 19970930; JP 31451297 A 19971029; KR 19970051377 A 19971007