EP 0845811 A3 20000112 - A read only memory array and a method of manufacturing the array
Title (en)
A read only memory array and a method of manufacturing the array
Title (de)
Festwertspeicheranordnung und Verfahren zur Herstellung
Title (fr)
Matrice de mémoire morte et procédé de fabrication associé
Publication
Application
Priority
SG 1996011480 A 19961129
Abstract (en)
[origin: EP0845811A2] A compact ROM array is formed in a single active region (5) bounnded by field oxide regions, the array being formed of one or more ROM banks (6, 7). Each ROM bank has a plurality of pairs of N+ bit lines (1-1 to 4-2), a plurality of conductive word lines (15-1 to 16-2) formed on top of, and perpendicular to, the bit lines, and left-select (11) and right-select (12-1, 12-2) lines arranged parallel to the word lines to enable particular transistor cells in the array to be selected to be read. The transistor cells (40, 41) are formed by adjacent portions of adjacent bit lines together with the portion of the word line extending between them. Isolation regions (43) between the transistor cells are formed by implanting the substrate between them with Boron dopant of a low energy and concentration after the bit and word lines have been fabricated and the transistor cells are programmed by implanting a channel region (42) with Boron of a higher energy and concentration after the low energy implantation step. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/8246 (2006.01); H01L 27/112 (2006.01)
CPC (source: EP US)
H10B 20/00 (2023.02 - EP US); H10B 20/383 (2023.02 - EP US)
Citation (search report)
- [XA] US 5526306 A 19960611 - HIKAWA TETSUO [JP], et al
- [XA] US 5117389 A 19920526 - YIU TOM D H [US]
- [XA] WO 9533266 A1 19951207 - APLUS INTEGRATED CIRCUITS INC [US]
- [XA] US 5392233 A 19950221 - IWASE TAIRA [JP]
- [A] US 4180826 A 19791225 - SHAPPIR JOSEPH [US]
- [A] PATENT ABSTRACTS OF JAPAN vol. 018, no. 684 (E - 1650) 22 December 1994 (1994-12-22)
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0845811 A2 19980603; EP 0845811 A3 20000112; JP H10163347 A 19980619; SG 64409 A1 19990427; TW 317021 B 19971001; US 5929494 A 19990727; US 6133100 A 20001017
DOCDB simple family (application)
EP 97120735 A 19971126; JP 33247497 A 19971117; SG 1996011480 A 19961129; TW 85115689 A 19961219; US 30432299 A 19990503; US 95438697 A 19971020