EP 0846786 A2 19980610 - Modified physoical vapor deposition chamber and method of depositing materials at low pressure
Title (en)
Modified physoical vapor deposition chamber and method of depositing materials at low pressure
Title (de)
PVD-Kammer sowie Verfahren zur Abscheidung von Werkstoffen bei niedrigem Druck
Title (fr)
Chambre de dépÔt physique en phase vapeur et procédé de déposition de matériaux à basse pression
Publication
Application
Priority
US 76158496 A 19961206
Abstract (en)
A conventional sputtering chamber (100) is modified by providing a target extension (102) that surrounds the plasma region (110) and confines electrons to the plasma. This enhancement of confinement of the plasma reduces the pressure needed to maintain the plasma. At low pressures, reduced scattering of sputtered species takes place and more sputtered particles arrive vertically at the substrate (108), improving the filling of high aspect ratio openings in the substrate. <IMAGE>
IPC 1-7
IPC 8 full level
C23C 14/34 (2006.01); C23C 14/04 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); H01L 21/203 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR)
C23C 14/046 (2013.01 - EP); C23C 14/34 (2013.01 - KR); C23C 14/35 (2013.01 - EP); H01J 37/3405 (2013.01 - EP); H01J 37/3423 (2013.01 - EP); H01J 37/3494 (2013.01 - EP); H01L 21/76877 (2013.01 - EP)
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 0846786 A2 19980610; EP 0846786 A3 20011107; JP H10219441 A 19980818; KR 19980063630 A 19981007; SG 53126 A1 19980928; TW 399101 B 20000721
DOCDB simple family (application)
EP 97309543 A 19971126; JP 36858297 A 19971208; KR 19970063732 A 19971128; SG 1997004157 A 19971127; TW 86118336 A 19971205