EP 0847539 A1 19980617 - OPTICAL SEMICONDUCTOR COMPONENT WITH DEEP RIDGED WAVEGUIDE
Title (en)
OPTICAL SEMICONDUCTOR COMPONENT WITH DEEP RIDGED WAVEGUIDE
Title (de)
OPTISCHES HALBLEITERBAUELEMENT MIT TIEFEM RIPPENWELLENLEITER
Title (fr)
COMPOSANT SEMI-CONDUCTEUR OPTIQUE A GUIDE D'ONDES NERVURE PROFOND
Publication
Application
Priority
- DE 19626130 A 19960628
- EP 9703584 W 19970626
Abstract (en)
[origin: DE19626130A1] Digital optical telecommunication uses optical semiconductor components having a transition region for the expansion of the mode field of a light wave in order to reduce losses when coupling to an optical fibre or an optical waveguide of a supporting plate. An optical semiconductor component contains a deep ridged waveguide (RIDGE) with a surfacing (DS) disposed on a substrate (SUB). The ridged waveguide (RIDGE) has a first (MQW) and a second (BULK) waveguide centre, these being separated by a separating layer (SEP). The thickness of this separating layer increases in a transition region (UB1) along a longitudinal direction (L) of the ridged waveguide (RIDGE), thus increasing the vertical distance between the two waveguide centres (MQW, BULK).
IPC 1-7
IPC 8 full level
G02B 6/30 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01)
CPC (source: EP US)
G02B 6/1228 (2013.01 - EP US); G02B 2006/12097 (2013.01 - EP US); G02B 2006/12102 (2013.01 - EP US); G02B 2006/12195 (2013.01 - EP US)
Citation (search report)
See references of WO 9800738A1
Designated contracting state (EPC)
DE ES FR GB IT NL SE
DOCDB simple family (publication)
DE 19626130 A1 19980108; EP 0847539 A1 19980617; JP H11511870 A 19991012; US 5933562 A 19990803; WO 9800738 A1 19980108
DOCDB simple family (application)
DE 19626130 A 19960628; EP 9703584 W 19970626; EP 97930508 A 19970626; JP 50385498 A 19970626; US 2919598 A 19980519