EP 0852064 A2 19980708 - METHOD OF PRODUCING VERY SMALL STRUCTURAL WIDTHS ON A SEMICONDUCTOR SUBSTRATE
Title (en)
METHOD OF PRODUCING VERY SMALL STRUCTURAL WIDTHS ON A SEMICONDUCTOR SUBSTRATE
Title (de)
VERFAHREN ZUM ERZEUGEN SEHR KLEINER STRUKTURWEITEN AUF EINEM HALBLEITERSUBSTRAT
Title (fr)
PROCEDE PERMETTANT DE CREER DES LARGEURS STRUCTURALES TRES REDUITES SUR UN SUBSTRAT A SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 9601697 W 19960910
- DE 19534780 A 19950919
Abstract (en)
[origin: DE19534780A1] The invention concerns a method of producing a very small structural width on a semiconductor substrate (1; 10) by producing a microstructure (8; 70) as the result of isotropic etching of a first layer (6) deposited over an edge and removing the edge-forming structure (7; 60). The width of the microstructure (8; 70) is approximately the same thickness as the deposited first layer. An underlying polysilicon (5, 50) layer is then selectively oxidised. The small structural width can be the cross section through the channel of a flasch memory cell.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/033 (2006.01); H01L 21/8247 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 41/00 (2023.01); H10B 69/00 (2023.01)
CPC (source: EP KR US)
H01L 21/0337 (2013.01 - EP US); H01L 21/0338 (2013.01 - EP US); H01L 21/28 (2013.01 - KR); H10B 41/00 (2023.02 - EP US)
Designated contracting state (EPC)
AT CH DE ES FR GB IT LI
DOCDB simple family (publication)
DE 19534780 A1 19970320; CN 1202981 A 19981223; EP 0852064 A2 19980708; JP H11512568 A 19991026; KR 19990044687 A 19990625; RU 2168797 C2 20010610; US 6027972 A 20000222; WO 9711483 A2 19970327; WO 9711483 A3 19970612
DOCDB simple family (application)
DE 19534780 A 19950919; CN 96198424 A 19960910; DE 9601697 W 19960910; EP 96938929 A 19960910; JP 51230397 A 19960910; KR 19980701943 A 19980316; RU 98107250 A 19960910; US 4453398 A 19980319