EP 0868545 B1 19991027 - PROCESS AND CIRCUITRY FOR GENERATING CURRENT PULSES FOR ELECTROLYTIC METAL DEPOSITION
Title (en)
PROCESS AND CIRCUITRY FOR GENERATING CURRENT PULSES FOR ELECTROLYTIC METAL DEPOSITION
Title (de)
VERFAHREN UND SCHALTUNGSANORDNUNG ZUR ERZEUGUNG VON STROMPULSEN ZUR ELEKTROLYTISCHEN METALLABSCHEIDUNG
Title (fr)
PROCEDE ET CIRCUIT POUR LA GENERATION D'IMPULSIONS DE COURANTS SERVANT AU DEPOT DE METAUX PAR ELECTROLYSE
Publication
Application
Priority
- DE 19547948 A 19951221
- EP 9604232 W 19960927
Abstract (en)
[origin: US6132584A] PCT No. PCT/EP96/04232 Sec. 371 Date Jun. 4, 1998 Sec. 102(e) Date Jun. 4, 1998 PCT Filed Sep. 27, 1996 PCT Pub. No. WO97/23665 PCT Pub. Date Jul. 3, 1997The invention relates to a method of generating short, cyclically repeating, unipolar or bipolar pulse currents IG, IE for electroplating, and to a circuit arrangement for electroplating with which pulse currents IG, IE can be generated. Electroplating methods of this type are referred to as pulse-plating methods. According to the invention, the secondary winding 6 of a current transformer 1 is connected in series into the electroplating direct current circuit 5, consisting of a bath direct current source 2 and a bath which is contained in an electroplating cell and which is represented by resistor RB. The primary winding 7 of the transformer has a larger number of turns than the secondary winding. The primary winding is controlled with pulses of high voltage and with relatively low current. The high pulse current on the secondary side temporarily compensates in pulses the electroplating direct current. This compensation can be a multiple of the electroplating current, such that deplating pulses with high amplitude are produced. The capacitor 10 guides the compensating current through charging and discharging. Through the invention, the necessity of using in pulse-plating the known electronic high current switches, which work uneconomically because of the great current conduction losses, is avoided.
IPC 1-7
IPC 8 full level
C25D 5/18 (2006.01); C25D 21/00 (2006.01); H03K 5/003 (2006.01)
CPC (source: EP KR US)
Designated contracting state (EPC)
AT CH DE ES FR GB IT LI NL SE
DOCDB simple family (publication)
US 6132584 A 20001017; AT E186081 T1 19991115; BR 9612163 A 19990713; CA 2241055 A1 19970703; CN 1093337 C 20021023; CN 1205745 A 19990120; CZ 170098 A3 19981014; CZ 290052 B6 20020515; DE 19547948 C1 19961121; DE 59603510 D1 19991202; EP 0868545 A1 19981007; EP 0868545 B1 19991027; ES 2139388 T3 20000201; HK 1017392 A1 19991119; JP 2000505145 A 20000425; JP 4028892 B2 20071226; KR 100465545 B1 20050228; KR 19990071793 A 19990927; WO 9723665 A1 19970703
DOCDB simple family (application)
US 9113698 A 19980604; AT 96934478 T 19960927; BR 9612163 A 19960927; CA 2241055 A 19960927; CN 96199166 A 19960927; CZ 170098 A 19960927; DE 19547948 A 19951221; DE 59603510 T 19960927; EP 9604232 W 19960927; EP 96934478 A 19960927; ES 96934478 T 19960927; HK 99102336 A 19990525; JP 52324197 A 19960927; KR 19980704072 A 19980529