Global Patent Index - EP 0885079 A4

EP 0885079 A4 2002-11-13 - METHOD FOR PRODUCING NEAR NET SHAPE PLANAR SPUTTERING TARGETS AND AN INTERMEDIATE THEREFOR

Title (en)

METHOD FOR PRODUCING NEAR NET SHAPE PLANAR SPUTTERING TARGETS AND AN INTERMEDIATE THEREFOR

Title (de)

VERFAHREN ZUR ERZEUGUNG EINES ENDABMESSUNGSNAHEN PLANAREN SPUTTERTARGETS UND ZWISCHENPRODUKT DAFÜR

Title (fr)

PROCEDE DE PRODUCTION DE SUBSTRATS PLANS DE FORME QUASIMENT NETTE POUR PULVERISATION CATHODIQUE ET INTERMEDIAIRE DESTINE A CE PROCEDE

Publication

EP 0885079 A4 (EN)

Application

EP 97906532 A

Priority

  • US 9702060 W
  • US 1294296 P

Abstract (en)

[origin: WO9731739A1] A preferred method for producing a pair of sputter targets includes the step of machining first and second backing plates to form surfaces having near net profiles characteristic of an ion source, the sputtering material and the target shape. A preform is constructed which includes the first backing plate (34), a first powder layer (36) abutting against the first backing plate, a spacer (38) abutting against the first powder layer, a second powder layer (40) abutting against the spacer, and the second backing plate abutting against the second powder layer. In a preferred form, the spacer comprises a pair of metal plates separated by a layer of bond-resistant material such as boron nitride. The preform is heated and isostatically pressed to consolidate the powder layers to form the pair of sputter targets and to diffusion bond the targets to corresponding backing plates. The method promotes the formation of uniformly even sputtering surfaces on the targets.

IPC 1-7 (main, further and additional classification)

B22F 3/14; B22F 3/24; B22F 5/00

IPC 8 full level (invention and additional information)

B22F 7/08 (2006.01); C23C 14/34 (2006.01)

CPC (invention and additional information)

C23C 14/3414 (2013.01); B22F 7/08 (2013.01); B22F 2003/1046 (2013.01); B22F 2998/10 (2013.01)

Combination set (CPC)

B22F 2998/10 + B22F 3/1208 + B22F 3/15

Citation (search report)

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

WO 9731739 A1 19970904; EP 0885079 A1 19981223; EP 0885079 A4 20021113; JP 2000506218 A 20000523

INPADOC legal status


2004-04-21 [18W] APPLICATION WITHDRAWN

- Effective date: 20040227

2003-03-19 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20030204

2002-11-13 [A4] DESPATCH OF SUPPLEMENTARY SEARCH REPORT

- Effective date: 20021001

2002-11-13 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A4

- Designated State(s): DE FR GB

1998-12-23 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 19980918

1998-12-23 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB