Global Patent Index - EP 0887710 A2

EP 0887710 A2 19981230 - Resist development process

Title (en)

Resist development process

Title (de)

Resistentwicklungsverfahren

Title (fr)

Procédé de développement de photoréserves

Publication

EP 0887710 A2 19981230 (EN)

Application

EP 98109959 A 19980602

Priority

US 88311697 A 19970626

Abstract (en)

A resist development process includes spinning a resist layer while immersing the resist layer in developer.

IPC 1-7

G03F 7/30

IPC 8 full level

G03F 7/30 (2006.01); H01L 21/027 (2006.01)

CPC (source: EP KR)

G03F 7/0035 (2013.01 - KR); G03F 7/0045 (2013.01 - KR); G03F 7/11 (2013.01 - KR); G03F 7/30 (2013.01 - KR); G03F 7/3021 (2013.01 - EP); G03F 7/32 (2013.01 - KR)

Designated contracting state (EPC)

DE FR GB IE IT NL

DOCDB simple family (publication)

EP 0887710 A2 19981230; EP 0887710 A3 19990908; EP 0887710 B1 20030219; CN 1213788 A 19990414; DE 69811430 D1 20030327; DE 69811430 T2 20031120; JP H11109648 A 19990423; KR 19990006917 A 19990125

DOCDB simple family (application)

EP 98109959 A 19980602; CN 98108925 A 19980522; DE 69811430 T 19980602; JP 17882198 A 19980625; KR 19980021855 A 19980612