EP 0887854 B1 20061122 - Microelectronic structure of a semiconductor material that is difficult to etch and metallized holes
Title (en)
Microelectronic structure of a semiconductor material that is difficult to etch and metallized holes
Title (de)
Mikroelektronische Struktur von einem schwierig zu ätzenden Material und metallisierte Löcher
Title (fr)
Structure à composant microélectronique en matériau semi-conducteur difficile à graver et à trous métallisés
Publication
Application
Priority
FR 9707922 A 19970625
Abstract (en)
[origin: EP0887854A1] Production of a microelectronic component structure in a difficultly etched semiconductor material is carried out by (a) attaching a thin film (12) of the semiconductor material to the front face (3) of a support substrate (1) of easily etched material; (b) forming the microelectronic component (20) in the thin film (12); and then (c) etching and metallising a via (33) for electrically connecting an electrode (18) on the back face of the support substrate to an electrode (24) of the microelectronic component (20). Preferably, step (a) is effected by the 'smart cut' method. Also claimed is structure produced by the above process, in which the difficultly etched semiconductor material is preferably silicon carbide and/or gallium nitride and the easily etched semiconductor material is silicon, quartz, alumina, sapphire or gallium arsenide.
IPC 8 full level
H01L 21/74 (2006.01); H01L 21/8234 (2006.01); H01L 21/04 (2006.01); H01L 21/3205 (2006.01); H01L 21/338 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 27/088 (2006.01); H01L 21/20 (2006.01)
CPC (source: EP US)
H01L 21/76898 (2013.01 - EP US); H01L 23/481 (2013.01 - EP US); H01L 29/66068 (2013.01 - EP US); H01L 29/66863 (2013.01 - EP US); H01L 21/2007 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT SE
DOCDB simple family (publication)
EP 0887854 A1 19981230; EP 0887854 B1 20061122; DE 69836451 D1 20070104; DE 69836451 T2 20071031; FR 2765398 A1 19981231; FR 2765398 B1 19990730; JP H1187526 A 19990330; US 6225651 B1 20010501
DOCDB simple family (application)
EP 98401539 A 19980623; DE 69836451 T 19980623; FR 9707922 A 19970625; JP 17363698 A 19980619; US 9565198 A 19980611