EP 0892990 A1 19990127 - SEMICONDUCTOR COMPONENT WITH A SPLIT FLOATING GATE
Title (en)
SEMICONDUCTOR COMPONENT WITH A SPLIT FLOATING GATE
Title (de)
HALBLEITERBAUELEMENT MIT EINEM GETEILTEN FLOATING GATE
Title (fr)
COMPOSANT A SEMICONDUCTEUR A GRILLE FLOTTANTE EN DEUX PARTIES
Publication
Application
Priority
- DE 9700722 W 19970409
- DE 19614011 A 19960409
Abstract (en)
[origin: DE19614011A1] In a semiconductor component, in particular an EEPROM, an avalanche breakdown from the buried channel (14) to the substrate (10) is avoided by a local thickening of the gate dielectric (insulating structure 22) at the transition to the tunnel dielectric (18). As a potential barrier is thus created, the gate and tunnel dielectrics may have the same thickness. The space required by such a cell is reduced.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP KR US)
H01L 29/42324 (2013.01 - EP US); H01L 29/788 (2013.01 - KR); H01L 29/7883 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IE IT NL
DOCDB simple family (publication)
DE 19614011 A1 19971016; DE 19614011 C2 20020613; EP 0892990 A1 19990127; JP 2001508938 A 20010703; JP 3732522 B2 20060105; KR 100349519 B1 20021218; KR 20000005304 A 20000125; TW 339476 B 19980901; US 6177702 B1 20010123; WO 9738446 A1 19971016
DOCDB simple family (application)
DE 19614011 A 19960409; DE 9700722 W 19970409; EP 97923733 A 19970409; JP 53575297 A 19970409; KR 19980708016 A 19981009; TW 86104354 A 19970407; US 16977498 A 19981009