EP 0902102 A1 19990317 - Ta sputtering targets, method of manufacturing the same, and assemblies
Title (en)
Ta sputtering targets, method of manufacturing the same, and assemblies
Title (de)
Ta-Aufstäubeziele, Verfahren zu ihrer Herstellung und Anordnungen
Title (fr)
Cibles de pulvérisation de ta, méthode de leurs production et assemblages
Publication
Application
Priority
JP 26110897 A 19970910
Abstract (en)
Inexpensive Ta sputtering targets which permit deposition of Ta and TaNx films with fewer particles and less dispersion of resistivity values. Ta targets having an average grain size of 0.1-300 mu m,with dispersion within+/- 20%, an oxygen content of 50ppm or below and containing Na</= 0.1ppm, K</= 0.1ppm, U</= 1ppb, Th</= 1ppb, Fe</= 5ppm, Cr</= 5ppm, and Ni</= 5ppm, the total content of refractory metal elements be ing 50ppm or less. Preferably, the sum of the intensity ratios of the three planes ä110ü, ä200ü and ä211ü is 55% or more, with dispersion of+/- 20% or less, the hydrogen concentration is 20 ppm or less, the average roughness (Ra) of the surface portion to be sputtered is 0.01-5 mu m, and an oxide layer with a thickness of 200 nm or less, and the target portions where a film is formed by the deposition of the sputtered target material is roughened. A method of manufacturing a Ta target and target assembly are also disclosed.
IPC 1-7
IPC 8 full level
C23C 14/14 (2006.01); C23C 14/34 (2006.01)
CPC (source: EP KR)
C23C 14/34 (2013.01 - KR); C23C 14/3414 (2013.01 - EP); H01J 37/3426 (2013.01 - EP); H01J 37/3491 (2013.01 - EP)
Citation (search report)
- [DA] WO 8707650 A1 19871217 - NIPPON MINING CO [JP]
- [A] DATABASE WPI Derwent World Patents Index;
Designated contracting state (EPC)
DE GB
DOCDB simple family (publication)
EP 0902102 A1 19990317; JP H1180942 A 19990326; KR 19990029673 A 19990426; TW 370568 B 19990921
DOCDB simple family (application)
EP 98116213 A 19980827; JP 26110897 A 19970910; KR 19980037266 A 19980910; TW 87114041 A 19980826