Global Patent Index - EP 0904159 A4

EP 0904159 A4 20020227 - PROCESS TO MODIFY WORK FUNCTIONS USING ION IMPLANTATION

Title (en)

PROCESS TO MODIFY WORK FUNCTIONS USING ION IMPLANTATION

Title (de)

VERFAHREN ZUM MODIFIZIEREN DES ELEKTRONENAUSTRITTSPOTENTIALS UNTER VERWENDUNG VON IONENIMPLANTATION

Title (fr)

PROCEDE PERMETTANT DE MODIFIER LE TRAVAIL D'EXTRACTION PAR IMPLANTATION D'ION

Publication

EP 0904159 A4 20020227 (EN)

Application

EP 97922305 A 19970328

Priority

  • US 9706168 W 19970328
  • US 62525996 A 19960401

Abstract (en)

[origin: WO9736693A1] The work function of electron emitters can be modified by forming a modifying layer at the surface using low energy ion implantation, in a controlled environment, placing chosen elements below the surface of electron emitters as Cs implanted in Si(100) at four different doses illustrates. Sometimes implanted species are deep enough that they do not react with the atmosphere during subsequent low-temperature processing. Then, species implanted in the emitting surfaces are segregated using elevated temperature treatment of the emitters in vacuum and/or reactive gases. The implanted ions modify the work function at the surface, via thin layers of the implanted species on top of the emitter surfaces, or compounds or alloy layers at the surface of the emitters. Depending on the implanted species, the initial emitter material, and the environment, these layers can either increase or decease the work function of the emitter.

IPC 1-7

B05D 5/12; C23C 14/14; C23C 14/16; C23C 14/48

IPC 8 full level

B05D 7/00 (2006.01); C23C 14/48 (2006.01); C23C 14/58 (2006.01); H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01L 21/265 (2006.01)

CPC (source: EP)

C23C 14/48 (2013.01); C23C 14/5806 (2013.01); H01J 9/022 (2013.01); H01J 2201/30426 (2013.01)

Citation (search report)

  • No further relevant documents disclosed
  • See references of WO 9736693A1

Designated contracting state (EPC)

FR

DOCDB simple family (publication)

WO 9736693 A1 19971009; EP 0904159 A1 19990331; EP 0904159 A4 20020227; JP 2000508110 A 20000627; TW 400553 B 20000801

DOCDB simple family (application)

US 9706168 W 19970328; EP 97922305 A 19970328; JP 53563097 A 19970328; TW 86107874 A 19970607