EP 0908423 A1 19990414 - Barium titanate semiconductive ceramic
Title (en)
Barium titanate semiconductive ceramic
Title (de)
Halbleitende Bariumtitanat Keramik
Title (fr)
Céramique semi-conductrice à base de titanate de barium
Publication
Application
Priority
JP 27674097 A 19971009
Abstract (en)
The present invention provides barium titanate semiconductive ceramic having low specific resistance at room temperature and high withstand voltage, which fully satisfies the demand for enhancing withstand voltage. The average ceramic grain size of the barium titanate semiconductive ceramic is controlled to about 0.9 mu m or less. By this control, the ceramic possesses low specific resistance at room temperature and high withstand voltage fully satisfying a recent demand for enhancing withstand voltage and may suitably used for applications such as controlling temperature and limiting current, or in exothermic devices for constant temperature. Accordingly, the barium titanate semiconductive ceramic enables an apparatus using the same to have enhanced performance and reduced size.
IPC 1-7
IPC 8 full level
C01G 23/00 (2006.01); C04B 35/46 (2006.01); C04B 35/468 (2006.01); H01C 7/02 (2006.01)
CPC (source: EP US)
B82Y 30/00 (2013.01 - EP US); C01G 23/006 (2013.01 - EP US); C04B 35/4682 (2013.01 - EP US); C01P 2002/50 (2013.01 - EP US); C01P 2002/76 (2013.01 - EP US); C01P 2002/77 (2013.01 - EP US); C01P 2004/62 (2013.01 - EP US); C01P 2004/64 (2013.01 - EP US)
Citation (applicant)
- JP H0426101 A 19920129 - INAX CORP
- JP S6025004 A 19850207 - OKAMURA SHIRO
Citation (search report)
- [X] EP 0641740 A1 19950308 - CHON INT CO LTD [KR]
- [X] US 5453262 A 19950926 - DAWSON WILLIAM J [US], et al
- [X] US 4832939 A 19890523 - MENASHI JAMEEL [US], et al
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0908423 A1 19990414; EP 0908423 B1 20030108; CN 1087719 C 20020717; CN 1214328 A 19990421; DE 69810564 D1 20030213; DE 69810564 T2 20030515; JP 3608599 B2 20050112; JP H11116327 A 19990427; KR 100318398 B1 20020219; KR 19990036978 A 19990525; SG 67565 A1 19990921; TW 588027 B 20040521; US 2001008866 A1 20010719; US 2003022784 A1 20030130; US 6472339 B2 20021029
DOCDB simple family (application)
EP 98118567 A 19981001; CN 98121320 A 19981009; DE 69810564 T 19981001; JP 27674097 A 19971009; KR 19980042214 A 19981009; SG 1998004015 A 19981005; TW 87116065 A 19980928; US 15706298 A 19980918; US 24353002 A 20020913