EP 0913834 A1 19990506 - NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Title (en)
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Title (de)
NICHTFLÜCHTIGE HALBLEITERSPEICHERANORDNUNG
Title (fr)
MEMOIRE REMANENTE A SEMI-CONDUCTEURS
Publication
Application
Priority
JP 9601907 W 19960710
Abstract (en)
In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address. <IMAGE>
IPC 1-7
IPC 8 full level
G11C 11/56 (2006.01)
CPC (source: EP US)
G11C 11/5621 (2013.01 - EP US); G11C 11/5628 (2013.01 - EP US); G11C 11/5635 (2013.01 - EP US); G11C 11/5642 (2013.01 - EP US); G11C 8/00 (2013.01 - EP US); G11C 16/08 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 9801861 A1 19980115; EP 0913834 A1 19990506; EP 0913834 A4 19990609; JP 3925944 B2 20070606; TW 331639 B 19980511; US 6166950 A 20001226
DOCDB simple family (application)
JP 9601907 W 19960710; EP 96923040 A 19960710; JP 50502598 A 19960710; TW 85110696 A 19960902; US 11736998 A 19980728