Title (en)

Field emission electron source, method of producing the same, and use of the same

Title (de)

Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben

Title (fr)

Source d'électrons à émission de champ, méthode pour sa production et utilisation

Publication

EP 0913849 B1 20100623 (EN)

Application

EP 98116103 A 19980826

Priority

• JP 29710897 A 19971029
• JP 6559298 A 19980316

Abstract (en)

[origin: EP0913849A2] A field emission electron source comprising an electrically conductive substrate 1, an oxidized or nitrided porous polysilicon layer 6 formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film 7 formed on said oxidized or nitrided porous polysilicon layer. Wherein a voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film. <IMAGE>

IPC 8 full level

H01J 1/30 (2006.01); H01J 1/308 (2006.01); H01J 1/312 (2006.01); H01J 31/12 (2006.01)

CPC (source: EP KR US)

B82Y 10/00 (2013.01 - EP US); H01J 1/304 (2013.01 - KR); H01J 1/312 (2013.01 - EP US); H01J 9/02 (2013.01 - KR)

Designated contracting state (EPC)

AT BE CH DE DK ES FI FR GB IT LI NL SE

DOCDB simple family (publication)

EP 0913849 A2 19990506; EP 0913849 A3 19990519; EP 0913849 B1 20100623; AT E472167 T1 20100715; CN 1121702 C 20030917; CN 1215907 A 19990505; DE 69841736 D1 20100805; DK 0913849 T3 20101011; ES 2345859 T3 20101004; KR 100360993 B1 20030124; KR 19990036606 A 19990525; KR 20020067686 A 20020823; SG 67550 A1 19990921; TW 391022 B 20000521; US 6249080 B1 20010619

DOCDB simple family (application)

EP 98116103 A 19980826; AT 98116103 T 19980826; CN 98116965 A 19980825; DE 69841736 T 19980826; DK 98116103 T 19980826; ES 98116103 T 19980826; KR 19980034727 A 19980826; KR 20020042609 A 20020719; SG 1998003332 A 19980827; TW 87113202 A 19980811; US 14064798 A 19980826