EP 0916161 A1 19990519 - NON-VOLATILE STORAGE CELL
Title (en)
NON-VOLATILE STORAGE CELL
Title (de)
NICHTFLÜCHTIGE SPEICHERZELLE
Title (fr)
CELLULE MEMOIRE NON VOLATILE
Publication
Application
Priority
- DE 9701600 W 19970729
- DE 19631147 A 19960801
Abstract (en)
[origin: WO9806139A1] The invention concerns a non-volatile write-once storage cell comprising a MOS transistor which, as gate dielectric, has a triple dielectric layer consisting of a first silicon oxide layer (51), a silicon nitride layer (52) and a second silicon oxide layer (53). The first silicon oxide layer (51) and the second silicon oxide layer (53) are each at least 3 nm thick. The storage cell is not erasable and can hold data for a period of more than 1000 years.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP KR)
H01L 29/511 (2013.01 - EP); H01L 29/788 (2013.01 - KR); H01L 29/792 (2013.01 - EP); H10B 69/00 (2023.02 - KR)
Designated contracting state (EPC)
AT CH DE ES FR GB IT LI
DOCDB simple family (publication)
WO 9806139 A1 19980212; DE 19631147 A1 19980205; DE 19631147 C2 20010809; EP 0916161 A1 19990519; JP 2000515325 A 20001114; KR 20000035785 A 20000626; TW 335555 B 19980701
DOCDB simple family (application)
DE 9701600 W 19970729; DE 19631147 A 19960801; EP 97937411 A 19970729; JP 50734398 A 19970729; KR 19997000742 A 19990129; TW 86110856 A 19970730