EP 0917228 A4 20080305 - NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Title (en)
NONAQUEOUS ELECTROLYTE SECONDARY BATTERY
Title (de)
NICHTWÄSSRIGE ELEKTROLYTISCHE SEKUNDÄRBATTERIE
Title (fr)
BATTERIE SECONDAIRE ELECTROLYTIQUE NON AQUEUSE
Publication
Application
Priority
- JP 9802400 W 19980529
- JP 14192097 A 19970530
Abstract (en)
[origin: EP0917228A1] Enhancement of the storage property at a high temperature and discharge characteristics at a low temperature of a nonaqueous electrolyte secondary cell is intended. A negative electrode material which is prepared by covering the surface of a nucleus made of a graphite powder with a carbonaceous matter, the graphite powder having a specified plane interval, spectrum value, mean particle size, specific surface area, tapping density, and (110)/(004) X-ray peak intensity ratio, is used in the nonaqueous electrolyte secondary cell. <IMAGE>
IPC 1-7
IPC 8 full level
H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/1393 (2010.01); H01M 4/58 (2006.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); H01M 10/36 (2006.01); H01M 4/02 (2006.01); H01M 4/131 (2010.01); H01M 4/36 (2006.01); H01M 4/52 (2006.01); H01M 4/525 (2010.01)
CPC (source: EP KR US)
H01M 4/0471 (2013.01 - EP US); H01M 4/133 (2013.01 - EP KR US); H01M 4/1393 (2013.01 - EP US); H01M 4/366 (2013.01 - EP US); H01M 4/587 (2013.01 - EP US); H01M 10/0525 (2013.01 - EP KR US); H01M 10/058 (2013.01 - KR); H01M 4/02 (2013.01 - EP US); H01M 4/131 (2013.01 - EP US); H01M 4/525 (2013.01 - EP US); H01M 2004/021 (2013.01 - EP US); Y02E 60/10 (2013.01 - EP); Y10T 29/49108 (2015.01 - EP US); Y10T 428/30 (2015.01 - EP US)
Citation (search report)
- [A] EP 0541889 A1 19930519 - SANYO ELECTRIC CO [JP]
- [A] EP 0573266 A1 19931208 - TOSHIBA KK [JP]
- [A] EP 0495613 A2 19920722 - TOSHIBA KK [JP]
- [PA] EP 0808798 A2 19971126 - SHARP KK [JP]
- [E] EP 0847098 A1 19980610 - DENSO CORP [JP], et al
- See references of WO 9854779A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0917228 A1 19990519; EP 0917228 A4 20080305; EP 0917228 B1 20110727; CN 1118880 C 20030820; CN 1227004 A 19990825; ID 21480 A 19990617; KR 100483126 B1 20050414; KR 20000029650 A 20000525; US 2002061445 A1 20020523; US 6403259 B1 20020611; US 6723471 B2 20040420; WO 9854779 A1 19981203
DOCDB simple family (application)
EP 98921899 A 19980529; CN 98800702 A 19980529; ID 990035 A 19980529; JP 9802400 W 19980529; KR 19997000723 A 19990129; US 21481899 A 19990222; US 62201 A 20011115