Global Patent Index - EP 0917228 A4

EP 0917228 A4 20080305 - NONAQUEOUS ELECTROLYTE SECONDARY BATTERY

Title (en)

NONAQUEOUS ELECTROLYTE SECONDARY BATTERY

Title (de)

NICHTWÄSSRIGE ELEKTROLYTISCHE SEKUNDÄRBATTERIE

Title (fr)

BATTERIE SECONDAIRE ELECTROLYTIQUE NON AQUEUSE

Publication

EP 0917228 A4 20080305 (EN)

Application

EP 98921899 A 19980529

Priority

  • JP 9802400 W 19980529
  • JP 14192097 A 19970530

Abstract (en)

[origin: EP0917228A1] Enhancement of the storage property at a high temperature and discharge characteristics at a low temperature of a nonaqueous electrolyte secondary cell is intended. A negative electrode material which is prepared by covering the surface of a nucleus made of a graphite powder with a carbonaceous matter, the graphite powder having a specified plane interval, spectrum value, mean particle size, specific surface area, tapping density, and (110)/(004) X-ray peak intensity ratio, is used in the nonaqueous electrolyte secondary cell. <IMAGE>

IPC 1-7

H01M 10/40; H01M 4/58; H01M 4/02

IPC 8 full level

H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/1393 (2010.01); H01M 4/58 (2006.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); H01M 10/36 (2006.01); H01M 4/02 (2006.01); H01M 4/131 (2010.01); H01M 4/36 (2006.01); H01M 4/52 (2006.01); H01M 4/525 (2010.01)

CPC (source: EP KR US)

H01M 4/0471 (2013.01 - EP US); H01M 4/133 (2013.01 - EP KR US); H01M 4/1393 (2013.01 - EP US); H01M 4/366 (2013.01 - EP US); H01M 4/587 (2013.01 - EP US); H01M 10/0525 (2013.01 - EP KR US); H01M 10/058 (2013.01 - KR); H01M 4/02 (2013.01 - EP US); H01M 4/131 (2013.01 - EP US); H01M 4/525 (2013.01 - EP US); H01M 2004/021 (2013.01 - EP US); Y02E 60/10 (2013.01 - EP); Y10T 29/49108 (2015.01 - EP US); Y10T 428/30 (2015.01 - EP US)

Citation (search report)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0917228 A1 19990519; EP 0917228 A4 20080305; EP 0917228 B1 20110727; CN 1118880 C 20030820; CN 1227004 A 19990825; ID 21480 A 19990617; KR 100483126 B1 20050414; KR 20000029650 A 20000525; US 2002061445 A1 20020523; US 6403259 B1 20020611; US 6723471 B2 20040420; WO 9854779 A1 19981203

DOCDB simple family (application)

EP 98921899 A 19980529; CN 98800702 A 19980529; ID 990035 A 19980529; JP 9802400 W 19980529; KR 19997000723 A 19990129; US 21481899 A 19990222; US 62201 A 20011115